BGA2001,115 NXP Semiconductors, BGA2001,115 Datasheet - Page 2

• Manufacturer Part Number: BGA2001,115
• Description: MMIC AMPLIFIER SOT-343R
• Manufacturer: NXP Semiconductors
• Type: Silicon MMIC Amplifierr

Specifications of BGA2001,115

• Noise Figure: 1.3dB
• Package / Case: SOT-343R
• Current - Supply: 3mA ~ 6mA
• Frequency: 1.8GHz
• Gain: 22dB
• Rf Type: Cellular, DECT, PHS, SATV
• Test Frequency: 900MHz
• Voltage - Supply: 4.5V
• Mounting Style: SMD/SMT
• Operating Frequency: 900 MHz to 1.8 GHz
• Operating Supply Voltage: 4.5 V
• Supply Current: 4.5 mA
• Maximum Power Dissipation: 135 mW
• Maximum Operating Temperature: + 150 C
• Manufacturer's Type: MMIC Amplifier
• Number Of Channels: 1
• Operating Supply Voltage (max): 4.5V
• Package Type: CMPAK
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Noise Figure (typ): 1.3@1800MHzdB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• P1db: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2062-2; 934055586115; BGA2001 T/R

NXP Semiconductors
FEATURES
 Low current, low voltage
 Very high power gain
 Low noise figure
 Integrated temperature compensated biasing
 Supply and RF output pin combined.
APPLICATIONS
 RF front end
 Wideband applications, e.g. analog and digital cellular
 Radar detectors
 Low noise amplifiers
 Satellite television tuners (SATV)
 High frequency oscillators.
DESCRIPTION
Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low voltage
applications in a plastic, 4-pin dual-emitter SOT343R
package.
QUICK REFERENCE DATA
1999 Aug 11
V
I
MSG
NF
S
SYMBOL
telephones, cordless telephones (PHS, DECT, etc.)
S
Silicon MMIC amplifier
DC supply voltage
DC supply current
maximum stable gain
noise figure
PARAMETER
RF input AC coupled
V
V
T
V
amb
VS-OUT
VS-OUT
VS-OUT
= 25 C
= 2.5 V; RF input AC coupled
= 2.5 V; f = 1.8 GHz;
= 2.5 V; f = 1.8 GHz; 
CONDITIONS
2
PINNING
handbook, halfpage
Marking code: A1.
Fig.1 Simplified outline (SOT343R) and symbol.
PIN
1
2
3
4
3
Top view
2
S
= 
GND
RF in
GND
V
S
opt
+ RFout
4
1

4.5
19.5
1.3
MAM430
TYP.
DESCRIPTION
CIRCUIT
BIAS
Product specification
RFin
4.5



MAX.
BGA2001
V S +RFout
GND
V
mA
dB
dB
UNIT