NCP5351DR2G ON Semiconductor, NCP5351DR2G Datasheet - Page 5

• Manufacturer Part Number: NCP5351DR2G
• Description: IC DRIVER MOSFET DUAL 4A 8SOIC
• Manufacturer: ON Semiconductor
• Type: High Side/Low Sider

Specifications of NCP5351DR2G

• Configuration: High and Low Side, Synchronous
• Input Type: Inverting and Non-Inverting
• Delay Time: 45ns
• Current - Peak: 4A
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 25V
• Voltage - Supply: 4.5 V ~ 6.3 V
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Rise Time: 16 ns
• Fall Time: 21 ns
• Supply Voltage (min): - 0.3 V
• Supply Current: 1 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 30 C
• Number Of Drivers: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NCP5351DR2GOS; NCP5351DR2GOS; NCP5351DR2GOSTR

ELECTRICAL CHARACTERISTICS
DC OPERATING SPECIFICATIONS
POWER SUPPLY
Undervoltage Lockout
CO INPUT CHARACTERISTICS
EN INPUT CHARACTERISTICS
THERMAL SHUTDOWN
HIGH−SIDE DRIVER
LOW−SIDE DRIVER
V
V
ing
Quiescent Current, Non−Operat-
ing
Start Threshold
Hysteresis
High Threshold
Low Threshold
Input Bias Current
High Threshold
Low Threshold
Input Bias Current
Overtemperature Trip Point
Hysteresis
Peak Output Current
Output Resistance (Sourcing)
Output Resistance (Sinking)
Peak Output Current
Output Resistance (Sourcing)
Output Resistance (Sinking)
S
BST
Quiescent Current, Operating
Quiescent Current, Operat-
Parameter
V
V
V
CO = 0 V
CO = 0 V
0 < V
Both outputs respond to CO
Both outputs are low, independent of CO
0 < V
Duty Cycle < 2.0%, Pulse Width < 100 ms, T
V
Duty Cycle < 2.0%, Pulse Width < 100 ms,
T
Duty Cycle < 2.0%, Pulse Width < 100 ms, T
V
Duty Cycle < 2.0%, Pulse Width < 100 ms, T
V
J
CO
CO
EN
BST
S
S
= 125°C, V
(0°C < T
= 4.5 V, V
= 4.5 V, V
= 0 V; V
= 0 V, 4.5 V; No output switching
= 0 V, 4.5 V; No output switching
CO
EN
− V
< V
< V
DRN
J
S
S
CO
BG
BG
< 125°C; V
= 4.5 V, V
BST
= 0 V, 4.5 V
= 4.0 V
= 0.5 V
− V
Test Conditions
http://onsemi.com
DRN
TG
S
= 4.5 V, V
= 5.0 V; 4.0 V < V
= 4.0 V + V
−
−
−
−
−
−
5
TG
DRN
= 0.5 V + V
J
J
J
BST
= 125°C,
= 125°C,
= 125°C,
< 25 V; V
DRN
EN
= V
4.05
Min
2.0
2.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
S
; unless otherwise noted)
4.25
0.42
0.42
Typ
275
170
1.0
4.0
0.5
4.0
0.6
50
30
−
−
−
0
−
−
0
Max
4.48
0.8
1.0
0.8
25
10
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
mA
mV
mA
mA
mA
mA
°C
°C
V
V
V
V
V
A
W
W
A
W
W