NCP5351DR2G ON Semiconductor, NCP5351DR2G Datasheet - Page 11

• Manufacturer Part Number: NCP5351DR2G
• Description: IC DRIVER MOSFET DUAL 4A 8SOIC
• Manufacturer: ON Semiconductor
• Type: High Side/Low Sider

Specifications of NCP5351DR2G

• Configuration: High and Low Side, Synchronous
• Input Type: Inverting and Non-Inverting
• Delay Time: 45ns
• Current - Peak: 4A
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 25V
• Voltage - Supply: 4.5 V ~ 6.3 V
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Rise Time: 16 ns
• Fall Time: 21 ns
• Supply Voltage (min): - 0.3 V
• Supply Current: 1 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 30 C
• Number Of Drivers: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NCP5351DR2GOS; NCP5351DR2GOS; NCP5351DR2GOSTR

Conditions: V
Room Temperature.
Figure 14. Top Gate Rise Time
S
= 5.0 V; BST − DRN = 5.0 V; C
Burst (2)
Gated
Pulse
+5.0 V
4.0 V
1.0 k
DRN
R1
TYPICAL PERFORMANCE CHARACTERISTICS
+
−
CO
BG
TG
Figure 13. Nonoverlap Test Configuration
LOAD
EN
CO
PGND
V
S
= 5.7 nF;
tpdh
(non−overlap)
DRN
BST
BG
TG
http://onsemi.com
tpdl
BG
BG
tpdh
(non−overlap)
TG
11
tpdl
TG
Pulse
Input
C4
100 nF
Conditions: V
Room Temperature.
R2
50
+
−
C2
10 mF
Figure 15. Top Gate Fall Time
S
= 5.0 V; BST − DRN = 5.0 V; C
C1
10 mF
C3
100 nF
LOAD
= 5.7 nF;