STP5N62K3 STMicroelectronics, STP5N62K3 Datasheet - Page 8

• Manufacturer Part Number: STP5N62K3
• Description: MOSFET N-CH 620V 4.2A TO220AB
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STP5N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 Ohm @ 2.1A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 680pF @ 50V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 Ohms
• Drain-source Breakdown Voltage: 620 V
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 26 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10771-5

Electrical characteristics
8/19
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
Figure 18. Maximum avalanche energy vs
E
V
AS
GS(th)
(norm)
1.00
0.80
1.10
0.70
0.90
(V)
V
0.7
0.6
(mJ)
0.5
0.8
0.4
0.9
1.0
130
120
110
100
SD
30
20
-75
90
50
40
10
80
70
60
0
0
0
vs temperature
characteristics
starting Tj
0.2
T
J
=25°C
20
-25
0.4
40
0.6 0.8
25
60
1.0
T
J
80
=150°C
75
1.2 1.4 1.6 1.8
T
V
J
I
=-50°C
D
DD
100
=4.2 A
=50 V
125
120 140
Doc ID 17361 Rev 2
AM08597v1
AM08598v1
AM08249v1
T
J
I
SD
(°C)
T
J
(A)
(°C)
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
R
BV
DS(on)
(norm)
1.00
0.95
1.05
0.90
1.10
(norm)
1.0
DSS
0.5
1.5
2.5
2.0
0
-75
-75
temperature
-25
-25
25
25
VDSS
STB/D/F/P/U5N62K3
75
75
vs temperature
125
125
AM08250v1
AM08596v1
T
T
J
J
(°C)
(°C)