NDD03N50ZT4G ON Semiconductor, NDD03N50ZT4G Datasheet - Page 2

• Manufacturer Part Number: NDD03N50ZT4G
• Description: MOSFET N-CH 500V 2.6A DPAK
• Manufacturer: ON Semiconductor

Specifications of NDD03N50ZT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.3 Ohm @ 1.15A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 274pF @ 25V
• Power - Max: 58W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDD03N50ZT4G; NDD03N50ZT4GOSTR

2. Insertion mounted
3. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
THERMAL RESISTANCE
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 4)
DYNAMIC CHARACTERISTICS
RESISTIVE SWITCHING CHARACTERISTICS
SOURCE−DRAIN DIODE CHARACTERISTICS (T
Junction−to−Case (Drain)
Junction−to−Ambient Steady State
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Drain−to−Source Leakage Current
Gate−to−Source Forward Leakage
Static Drain−to−Source
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
Plateau Voltage
Gate Resistance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Coefficient
On−Resistance
Characteristic
Parameter
(T
DBV
Symbol
R
V
BV
J
t
t
I
I
C
DS(on)
GS(th)
C
C
V
V
DT
g
Q
Q
d(on)
d(off)
GSS
DSS
Q
= 25°C unless otherwise noted)
Q
R
t
oss
t
FS
GP
t
SD
DSS
iss
rss
rr
gd
gs
r
f
DSS
g
g
rr
J
/
C
= 25°C unless otherwise noted)
(Note 2) NDD03N50Z−1
V
http://onsemi.com
(Note 3) NDD03N50Z
DS
I
S
= 500 V, V
V
V
V
V
V
V
V
V
= 2.6 A, di/dt = 100 A/ms
V
DD
DD
I
GS
DS
DS
S
GS
Reference to 25°C,
DS
GS
GS
Test Conditions
= 2.6 A, V
= 250 V, I
= 250 V, I
NDD03N50Z
= 10 V, I
= 15 V, I
= 25 V, V
= V
= 0 V, V
V
= 10 V, R
f = 1.0 MHz
2
= 0 V, I
V
I
GS
D
GS
GS
= 1 mA
GS
= ±20 V
= 10 V
, I
D
D
D
= 0 V
D
DD
GS
D
D
GS
G
= 1 mA
= 1.15 A
= 1.15 A
= 50 mA
= 2.6 A,
= 2.6 A,
= 30 V
= 0 V
= 5 W
= 0 V,
Symbol
R
R
150°C
qJC
qJA
25°C
Min
500
3.0
Value
Typ
274
240
2.2
0.6
2.8
1.8
2.3
5.5
6.4
4.5
0.7
41
80
38
10
15
8
9
7
7
Max
±10
3.3
4.5
1.6
50
1
°C/W
V/°C
Unit
Unit
mA
mA
pF
nC
mC
ns
ns
W
W
V
V
S
V
V