NDD03N50ZT4G ON Semiconductor, NDD03N50ZT4G Datasheet

no-image

NDD03N50ZT4G

Manufacturer Part Number
NDD03N50ZT4G
Description
MOSFET N-CH 500V 2.6A DPAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NDD03N50ZT4G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.3 Ohm @ 1.15A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
10nC @ 10V
Input Capacitance (ciss) @ Vds
274pF @ 25V
Power - Max
58W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDD03N50ZT4G
NDD03N50ZT4GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NDD03N50ZT4G
Manufacturer:
ON Semiconductor
Quantity:
800
Part Number:
NDD03N50ZT4G
Manufacturer:
ON
Quantity:
12 500
NDD03N50Z
N-Channel Power MOSFET
500 V, 3.3 W
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. I
ABSOLUTE MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 0
Drain−to−Source Voltage
Continuous Drain Current R
Continuous Drain Current
R
Pulsed Drain Current, V
Power Dissipation R
Gate−to−Source Voltage
Single Pulse Avalanche Energy,
I
ESD (HBM) (JESD22−A114)
Peak Diode Recovery
Continuous Source Current
(Body Diode)
Maximum Temperature for Soldering
Leads
Operating Junction and
Storage Temperature Range
D
Compliant
Low ON Resistance
Low Gate Charge
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
qJC
= 2.6 A
D
v 2.6 A, di/dt ≤ 200 A/ms, V
, T
A
= 100°C
Rating
qJC
GS
@ 10 V
qJC
DD
≤ BV
(T
Symbol
T
DSS
C
V
dv/dt
V
V
J
E
I
P
= 25°C unless otherwise noted)
, T
DSS
DM
T
I
I
I
esd
GS
AS
D
D
S
D
L
, T
stg
J
≤ 150°C.
4.5 (Note 1)
−55 to 150
Value
2000
500
±30
120
260
2.6
1.7
2.6
10
58
1
V/ns
Unit
mJ
°C
°C
W
V
A
A
A
V
V
A
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
MARKING AND ORDERING INFORMATION
500 V
V
CASE 369D
DSS
STYLE 2
G (1)
1
IPAK
2
3
http://onsemi.com
N−Channel
4
R
Publication Order Number:
D (2)
DS(on)
CASE 369AA
1 2
(MAX) @ 1.15 A
S (3)
STYLE 2
3.3 W
DPAK
NDD03N50Z/D
3
4

Related parts for NDD03N50ZT4G

NDD03N50ZT4G Summary of contents

Page 1

NDD03N50Z N-Channel Power MOSFET 500 V, 3.3 W Features • Low ON Resistance • Low Gate Charge • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (T Rating Symbol Drain−to−Source ...

Page 2

THERMAL RESISTANCE Parameter Junction−to−Case (Drain) Junction−to−Ambient Steady State 2. Insertion mounted 3. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 oz] including traces). ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ...

Page 3

3.0 2.5 2.0 1.5 1.0 0.5 0 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 5.00 4.75 4.50 4.25 4.00 3.75 3.50 3.25 3.00 2.75 2.50 5.0 ...

Page 4

T = 150° 125° 100 150 200 250 300 350 400 450 500 V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Drain−to−Source Leakage Current versus Voltage ...

Page 5

V GS SINGLE PULSE 0.1 0.01 0.1 Figure 12. Maximum Rated Forward Biased 10 50% (DUTY CYCLE) 1 20% 10 SINGLE PULSE 0.01 1E−06 1E−05 1E−04 Figure 13. Thermal Impedance (Junction−to−Case) ...

Page 6

... ORDERING INFORMATION Order Number NDD03N50Z−1G NDD03N50ZT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Package IPAK (Pb−Free) DPAK (Pb−Free) MARKING DIAGRAMS 4 Drain 4 Drain 2 Drain 3 1 Gate ...

Page 7

... DETAIL 0.005 (0.13 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA−01 ISSUE GAUGE L2 SEATING C PLANE PLANE DETAIL A ROTATED SOLDERING FOOTPRINT* 6.20 3 ...

Page 8

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

Related keywords