STW17N62K3 STMicroelectronics, STW17N62K3 Datasheet - Page 9

• Manufacturer Part Number: STW17N62K3
• Description: MOSFET N-CH 620V 15A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STW17N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 94nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 50V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohms
• Forward Transconductance Gfs (max / Min): 1.6 V
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 15 A
• Power Dissipation: 190 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 94 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10717-5

STF17N62K3, STP17N62K3, STW17N62K3
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Figure 18. Switching times test circuit for
Figure 20. Test circuit for inductive load
Figure 22. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuits
Figure 19. Gate charge test circuit
Figure 21. Unclamped Inductive load test
Figure 23. Switching time waveform
circuit
Test circuits
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