STP85N3LH5 STMicroelectronics, STP85N3LH5 Datasheet - Page 5

MOSFET N-CH 30V 80A TO-220

STP85N3LH5

Manufacturer Part Number
STP85N3LH5
Description
MOSFET N-CH 30V 80A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STP85N3LH5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.4 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 5V
Input Capacitance (ciss) @ Vds
1850pF @ 25V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0054 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 22 V
Continuous Drain Current
80 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
40A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
4.6mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8451-5

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STD85N3LH5
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
RRM
I
SD
Q
t
SD
t
t
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching on/off (inductive load)
Source drain diode
Parameter
Parameter
Doc ID 13833 Rev 7
V
R
Figure 15
I
I
di/dt = 100 A/µs,
V
Figure 17
SD
SD
DD
G
DD
= 4.7 Ω, V
= 40 A, V
= 80 A,
Test conditions
Test conditions
= 15 V, I
= 20 V
D
GS
GS
= 40 A,
= 0
= 5 V
Electrical characteristics
Min.
Min.
Typ.
23.6
10.8
Typ.
31.8
26.1
14
1.6
6
Max.
Max.
320
1.1
80
Unit
Unit
nC
ns
ns
ns
ns
ns
5/16
A
A
V
A

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