STF10NM65N STMicroelectronics, STF10NM65N Datasheet - Page 3

MOSFET N-CH 650V 9A TO-220FP

STF10NM65N

Manufacturer Part Number
STF10NM65N
Description
MOSFET N-CH 650V 9A TO-220FP
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STF10NM65N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
480 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
850pF @ 50V
Power - Max
25W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
4.5A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
430mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.48 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
9 A
Power Dissipation
25 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
Symbol
dv/dt
Symbol
R
Symbol
R
R
I
SD
DM
P
V
V
thj-case
V
T
thj-amb
thj-pcb
E
I
I
TOT
I
T
ISO
GS
T
DS
stg
D
D
AS
AS
j
≤ 9 A, di/dt ≤ 400 A/µs, V
(2)
l
(3)
Absolute maximum ratings
Thermal data
Avalanche characteristics
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s; T
Storage temperature
Max. operating junction temperature
Thermal resistance junction-case
max
Thermal resistance junction-pcb max
Thermal resistance junction-amb
max
Maximum lead temperature for
soldering purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
(starting T
j
= 25 °C, I
Parameter
DD
Parameter
Parameter
= 80% V
C
D
= 25 °C
GS
= I
AS
= 0)
(BR)DSS
, V
C
C
DD
= 25 °C
= 100 °C
= 50 V)
C
= 25 °C)
TO-220
62.5
--
IPAK
1.38
100
TO-220/IPAK
--
DPAK
5.7
36
90
300
--
9
DPAK
Max value
-55 to 150
50
--
Value
± 25
200
150
2.5
650
15
TO-220FP
Electrical ratings
TO-220FP
5.7
2500
36
9
62.5
25
(1)
--
5
(1)
(1)
°C/W
°C/W
°C/W
V/ns
Unit
Unit
Unit
°C
°C
°C
mJ
W
V
V
A
A
A
V
A
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