STD12NM50ND STMicroelectronics, STD12NM50ND Datasheet - Page 5

• Manufacturer Part Number: STD12NM50ND
• Description: MOSFET N-CH 500V 11A DPAK
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STD12NM50ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 850pF @ 50V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10020-2

STB12NM50ND, STD12NM50ND, STF12NM50ND
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2.
Symbol
Symbol
I
SDM
V
t
t
I
I
d(on)
d(off)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
RRM
RRM
I
SD
Q
Q
t
SD
t
t
t
r
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 14936 Rev 2
V
R
Figure 18
I
I
V
Figure 20
V
di/dt =100 A/µs, I
Tj = 150 °C,
SD
SD
DD
DD
DD
G
= 4.7 Ω, V
= 11 A, di/dt =100 A/µs,
= 11 A, V
= 250 V, I
= 100 V
= 100 V
Test conditions
Test conditions
Figure 20
GS
GS
D
=0
= 5.5 A,
= 10 V
SD
= 11 A
Electrical characteristics
Min.
Min. Typ. Max. Unit
-
-
-
-
-
Typ.
122
650
160
940
12
15
40
17
11
12
Max. Unit
1.6
11
44
-
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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