SUD19N20-90-E3 Vishay, SUD19N20-90-E3 Datasheet - Page 4

• Manufacturer Part Number: SUD19N20-90-E3
• Description: MOSFET N-CH D-S 200V DPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD19N20-90-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 35 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 19 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 19A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 90mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUD19N20-90-E3TR

SUD19N20-90
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71767.
www.vishay.com
4
0.01
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
25
20
15
10
5
0
2
1
- 50 - 25
10 -
0
0.1
On-Resistance vs. Junction Temperature
4
0.2
Duty Cycle = 0.5
V
I
D
GS
Maximum Avalanche Drain Current
25
= 5 A
Single Pulse
= 10 V
0.02
0
T
T
vs. Case Temperature
J
50
0.05
C
- Junction Temperature (
25
- Case Temperature (°C)
75
50
10 -
3
75
100
Normalized Thermal Transient Impedance, Junction-to-Case
100
125
°C
125
)
150
150
10 -
2
Square Wave Pulse Duration (s)
175
175
10 -
100
1
100
0.1
10
10
1
1
0
1 .
0
Limited by R
* V
GS
Source-Drain Diode Forward Voltage
> minimum V
V
V
DS
0.3
1
SD
DS(on)
Single Pulse
T
- Drain-to-Source Voltage (V)
C
- Source-to-Drain Voltage (V)
T
Safe Operating Area
= 25 °C
J
1
*
= 150 °C
GS
at which R
1
0
0.6
S10-2245-Rev. E, 04-Oct-10
Document Number: 71767
DS(on)
T
100
J
= 25 °C
0.9
is specified
10
10 µs
100 µs
1 ms
10 ms
100 ms
1 s, DC
1
0
0
1.2
0
30