SUD19N20-90-E3 Vishay, SUD19N20-90-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD19N20-90-E3
• Description: MOSFET N-CH D-S 200V DPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD19N20-90-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 35 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 19 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 19A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 90mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUD19N20-90-E3TR

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 71767
S10-2245-Rev. E, 04-Oct-10
2500
2000
1500
1000
500
40
30
20
10
70
60
50
40
30
20
10
0
0
0
0
0
0
V
GS
= 10 V thru 7 V
C
rss
40
2
V
V
10
DS
DS
Output Characteristics
- Drain-to-Source Voltage (V)
Transconductance
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
Capacitance
80
4
20
6 V
C
oss
120
6
C
T
iss
C
30
= - 55 °C
160
8
125 °C
25 °C
4 V
5 V
200
10
40
0.20
0.15
0.10
0.05
0.00
40
30
20
10
20
16
12
8
4
0
0
0
0
0
V
I
D
DS
= 19 A
V
On-Resistance vs. Drain Current
10
= 100 V
1
GS
V
1 0
= 6 V
Transfer Characteristics
GS
Q
g
- Gate-to-Source Voltage (V)
20
I
2
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
SUD19N20-90
2 0
30
3
Vishay Siliconix
T
C
= 125 °C
25 °C
40
4
V
www.vishay.com
3 0
GS
= 10 V
50
5
- 55 °C
40
60
6
3