SUD09P10-195-GE3 Vishay, SUD09P10-195-GE3 Datasheet - Page 3

• Manufacturer Part Number: SUD09P10-195-GE3
• Description: MOSFET P-CH 100V DPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD09P10-195-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 195 mOhm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 34.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 1055pF @ 50V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 0.162ohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: -20V
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SUD09P10-195-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 65903
S10-0634-Rev. A, 22-Mar-10
2.0
1.6
1.2
0.8
0.4
0.0
15
12
25
20
15
10
9
6
3
0
5
0
0
0
0
T
C
= 25 °C
T
C
= - 55 °C
3
V
V
V
Transfer Characteristics
DS
1
1
GS
T
Output Characteristics
GS
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
= 125 °C
Transconductance
I
= 10 V thru 5 V
D
T
T
C
- Drain Current (A)
C
= 125 °C
6
= 25 °C
2
2
9
T
C
3
3
= - 55 °C
12
V
V
GS
GS
= 4 V
= 3 V
15
4
4
0.30
0.25
0.20
0.15
0.10
0.60
0.45
0.30
0.15
0.00
10
8
6
4
2
0
0
0
0
On-Resistance vs. Gate-to-Source Voltage
I
D
= 3.6 A
V
GS
On-Resistance vs. Drain Current
5
3
2
V
V
= 4.5 V
DS
GS
Q
g
= 25 V
- Gate-to-Source Voltage (V)
- Total Gate Charge (nC)
I
D
Gate Charge
- Drain Current (A)
V
10
6
4
DS
SUD09P10-195
= 50 V
V
DS
Vishay Siliconix
15
= 80 V
9
6
V
GS
T
T
www.vishay.com
J
J
20
12
= 150 °C
= 10 V
= 25 °C
8
25
15
10
3