SUD09P10-195-GE3 Vishay, SUD09P10-195-GE3 Datasheet

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SUD09P10-195-GE3

Manufacturer Part Number
SUD09P10-195-GE3
Description
MOSFET P-CH 100V DPAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SUD09P10-195-GE3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
195 mOhm @ 3.6A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
8.8A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
34.8nC @ 10V
Input Capacitance (ciss) @ Vds
1055pF @ 50V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Polarity
P Channel
Drain Source Voltage Vds
-100V
On Resistance Rds(on)
0.162ohm
Rds(on) Test Voltage Vgs
-10V
Voltage Vgs Max
-20V
Operating Temperature Range
-55°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SUD09P10-195-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUD09P10-195-GE3
Manufacturer:
VISHAY
Quantity:
12 000
Part Number:
SUD09P10-195-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SUD09P10-195-GE3
0
Company:
Part Number:
SUD09P10-195-GE3
Quantity:
70 000
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
Document Number: 65903
S10-0634-Rev. A, 22-Mar-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
Junction-to-Case (Drain)
Ordering Information: SUD09P10-195-GE3 (Lead (Pb)-free and Halogen-free)
V
- 100
DS
(V)
G
Top View
TO-252
0.210 at V
0.195 at V
D
S
R
DS(on)
a
GS
GS
J
a
Drain Connected to Tab
(Ω)
= - 4.5 V
= - 10 V
= 150 °C)
c
P-Channel 100 V (D-S) MOSFET
I
- 8.8
- 8.5
D
(A)
C
Q
= 25 °C, unless otherwise noted
g
11.7
(Typ.)
T
T
T
L = 0.1 mH
T
A
C
C
C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
c
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Power Switch
• DC/DC Converters
Definition
Symbol
Symbol
T
R
J
R
V
V
E
I
g
I
P
, T
DM
I
AS
thJC
GS
thJA
DS
AS
D
D
and UIS Tested
®
stg
Power MOSFET
G
P-Channel MOSFET
- 55 to 150
S
D
Limit
- 100
32.1
Limit
± 20
- 8.8
- 7.1
16.2
- 15
- 18
SUD09P10-195
2.5
3.9
50
b
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SUD09P10-195-GE3 Summary of contents

Page 1

... DS(on) 0.195 100 0.210 4 TO-252 Drain Connected to Tab Top View Ordering Information: SUD09P10-195-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current a Single Avalanche Energy a Maximum Power Dissipation ...

Page 2

... SUD09P10-195 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... ° 125 ° Drain Current (A) D Transconductance Document Number: 65903 S10-0634-Rev. A, 22-Mar-10 0. 0.25 0. 0. 0.60 0.45 0.30 0. ° SUD09P10-195 Vishay Siliconix Drain Current (A) D On-Resistance vs. Drain Current T = 150 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage Total Gate Charge (nC) ...

Page 4

... SUD09P10-195 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1600 1200 C iss 800 400 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 2 3 1.7 1.3 0.9 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature www ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65903. Document Number: 65903 S10-0634-Rev. A, 22-Mar-10 100 °C 1 0 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUD09P10-195 Vishay Siliconix Limited DS(on °C A Single Pulse BVDSS Limited Drain-to-Source Voltage ( > minimum V at which R is specified GS GS ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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