SI3588DV-T1-GE3 Vishay, SI3588DV-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI3588DV-T1-GE3
• Description: MOSFET N/P-CH 20V 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3588DV-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.5A, 570mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 7.5nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.063", 1.60mm Width)
• Transistor Polarity: N And P Channel
• Drain Source Voltage Vds: 20V
• Threshold Voltage Vgs Typ: 450mV
• Power Dissipation Pd: 830mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3588DV-T1-GE3TR

Si3588DV
Vishay Siliconix
www.vishay.com
6
–0.1
–0.2
0.1
0.4
0.3
0.2
0.1
0.0
10
5
4
3
2
1
0
1
0.00
–50
0
V
I
–25
D
Source-Drain Diode Forward Voltage
DS
= 2.2 A
V
T
= 10 V
0.3
1
SD
J
= 150_C
Q
0
I
– Source-to-Drain Voltage (V)
D
g
T
Threshold Voltage
= 250 mA
– Total Gate Charge (nC)
J
– Temperature (_C)
25
Gate Charge
0.6
2
50
0.9
3
T
75
J
= 25_C
100
1.2
4
_
125
1.5
150
5
New Product
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.5
0.4
0.3
0.2
0.1
0.0
8
6
4
2
0
–50
0.01
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
On-Resistance vs. Junction Temperature
–25
V
I
D
GS
= 2.2 A
1
V
= 4.5 V
T
GS
J
0
– Junction Temperature (_C)
0.1
– Gate-to-Source Voltage (V)
25
2
Time (sec)
50
I
D
= 2.2 A
S-02383—Rev. A, 23-Oct-00
1
Document Number: 71332
3
75
100
4
125
10
150
5
30