SI3588DV-T1-GE3 Vishay, SI3588DV-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI3588DV-T1-GE3
• Description: MOSFET N/P-CH 20V 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3588DV-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.5A, 570mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 7.5nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.063", 1.60mm Width)
• Transistor Polarity: N And P Channel
• Drain Source Voltage Vds: 20V
• Threshold Voltage Vgs Typ: 450mV
• Power Dissipation Pd: 830mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3588DV-T1-GE3TR

Si3588DV
Vishay Siliconix
www.vishay.com
4
–0.0
–0.1
–0.2
–0.3
–0.4
0.2
0.1
0.1
0.01
10
0.1
1
–50
0.00
2
1
10
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
–25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
– Source-to-Drain Voltage (V)
J
T
Threshold Voltage
I
= 150_C
D
J
0.4
10
– Temperature (_C)
= 250 mA
25
–3
Single Pulse
50
0.6
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.8
T
10
J
100
–2
= 25_C
1.0
_
125
Square Wave Pulse Duration (sec)
150
1.2
New Product
10
–1
1
0.30
0.25
0.20
0.15
0.10
0.05
0.00
8
6
4
2
0
0.01
0
Single Pulse Power (Junction-to-Ambient)
On-Resistance vs. Gate-to-Source Voltage
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
V
Notes:
1
P
GS
DM
JM
0.1
– Gate-to-Source Voltage (V)
– T
A
t
1
= P
Time (sec)
t
2
2
DM
I
D
Z
= 3.0 A
thJA
thJA
100
t
t
(t)
1
2
S-02383—Rev. A, 23-Oct-00
= 130_C/W
1
Document Number: 71332
3
600
4
10
30
5