SI3586DV-T1-GE3 Vishay, SI3586DV-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI3586DV-T1-GE3
• Description: MOSFET N/P-CH 20V 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3586DV-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 2.1A
• Vgs(th) (max) @ Id: 1.1V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.063", 1.60mm Width)
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 20V
• Threshold Voltage Vgs Typ: 1.1V
• Power Dissipation Pd: 830mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3586DV-T1-GE3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 72310
S-60422-Rev. C, 20-Mar-06
0.10
0.08
0.06
0.04
0.02
0.00
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
0
0
0
V
I
D
DS
= 3.4 A
1
On-Resistance vs. Drain Current
= 10 V
1
V
1
GS
V
DS
2
= 5 thru 2 V
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
2
I
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
3
2
V
V
GS
GS
= 4.5 V
= 2.5 V
3
4
3
5
4
1.5 V
6
4
5
7
New Product
6
5
8
1.6
1.4
1.2
1.0
0.8
0.6
600
500
400
300
200
100
8
7
6
5
4
3
2
1
0
0.00
- 50
0
0
On-Resistance vs. Junction Temperature
C
0.25
- 25
V
I
rss
D
GS
= 3.4 A
V
= 4.5 V
V
0.50
GS
4
T
DS
J
0
Transfer Characteristics
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
C
25 °C
0.75
oss
25
T
Capacitance
C
8
= 125 °C
1.00
50
C
Vishay Siliconix
iss
1.25
12
75
Si3586DV
- 55 °C
1.50
100
www.vishay.com
16
1.75
125
2.00
150
20
3