SI4947ADY-T1-GE3 Vishay, SI4947ADY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4947ADY-T1-GE3
• Description: MOSFET P-CH 30V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4947ADY-T1-GE3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 5V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Module Configuration: Dual
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -3A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 62mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4947ADY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71101
S09-0870-Rev. D, 18-May-09
0.30
0.24
0.18
0.12
0.06
0.00
10
30
10
8
6
4
2
0
1
0
0
0
V
I
V
D
Source-Drain Diode Forward Voltage
DS
GS
= 3.9 A
On-Resistance vs. Drain Current
= 10 V
= 4.5 V
0.3
2
3
V
SD
Q
g
- Source-to-Drain Voltage (V)
I
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
0.6
6
4
T
J
= 150 °C
0.9
9
6
T
J
= 25 °C
V
GS
1.2
= 10 V
12
8
1.5
15
10
1000
0.40
0.32
0.24
0.16
0.08
0.00
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
rss
V
I
D
- 25
GS
= 3.9 A
= 10 V
6
2
V
V
GS
DS
T
0
C
J
oss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
Capacitance
25
12
4
C
50
iss
Vishay Siliconix
Si4947ADY
18
6
75
I
D
100
www.vishay.com
= 3.9 A
24
8
125
150
30
10
3