SI4947ADY-T1 VISHAY [Vishay Siliconix], SI4947ADY-T1 Datasheet
SI4947ADY-T1
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SI4947ADY-T1 Summary of contents
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... Top View Ordering Information: Si4947ADY Si4947ADY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current continuous Source Current (Diode Conduction) ...
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... Si4947ADY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...
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... SD Document Number: 71101 S-31989—Rev. C, 13-Oct-03 1000 800 600 400 200 12 15 1.8 1.6 1.4 1.2 1.0 0.8 0 0.40 0.32 0.24 0. 25_C J 0.08 0.00 1.2 1.5 Si4947ADY Vishay Siliconix Capacitance C iss C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 3 100 T - Junction Temperature (_C) J On-Resistance vs ...
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... Si4947ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0 250 mA D 0.4 0.2 0.0 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse ...