SI3585DV-T1-GE3 Vishay, SI3585DV-T1-GE3 Datasheet - Page 6
![MOSFET N/P-CH 20V 6-TSOP](/photos/18/99/189973/4243386_sml.jpg)
SI3585DV-T1-GE3
Manufacturer Part Number
SI3585DV-T1-GE3
Description
MOSFET N/P-CH 20V 6-TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI3585DV-T1-E3.pdf
(8 pages)
Specifications of SI3585DV-T1-GE3
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
125 mOhm @ 2.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2A, 1.5A
Vgs(th) (max) @ Id
600mV @ 250µA
Gate Charge (qg) @ Vgs
3.2nC @ 4.5V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
6-TSOP (0.063", 1.60mm Width)
Transistor Polarity
N And P Channel
Continuous Drain Current Id
1.8A
Drain Source Voltage Vds
20V
Power Dissipation Pd
750mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI3585DV-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3585DV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si3585DV
Vishay Siliconix
www.vishay.com
6
–0.2
–0.4
4.5
3.6
2.7
1.8
0.9
0.0
0.1
0.6
0.4
0.2
0.0
10
1
0.00
0.0
–50
V
I
–25
D
Source-Drain Diode Forward Voltage
DS
= 2.4 A
V
0.6
T
0.3
= 10 V
J
SD
= 150_C
Q
0
– Source-to-Drain Voltage (V)
g
T
Threshold Voltage
I
– Total Gate Charge (nC)
D
J
– Temperature (_C)
= 250 mA
25
Gate Charge
1.2
0.6
50
1.8
0.9
T
75
J
= 25_C
100
1.2
2.4
125
_
1.5
3.0
150
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.6
0.5
0.4
0.3
0.2
0.1
0.0
8
6
4
2
0
–50
0.01
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
Single Pulse Power, Junction-to-Ambient
–25
V
I
D
GS
= 2.4 A
I
D
= 10 V
1
V
T
= 1.2 A
GS
J
0
– Junction Temperature (_C)
0.1
– Gate-to-Source Voltage (V)
25
2
Time (sec)
50
I
D
= 1.8 A
S-03512—Rev. B, 04-Apr-01
Document Number: 71184
1
3
75
100
4
125
10
150
5
30