SI3585DV-T1-GE3 Vishay, SI3585DV-T1-GE3 Datasheet - Page 4
![MOSFET N/P-CH 20V 6-TSOP](/photos/18/99/189973/4243386_sml.jpg)
SI3585DV-T1-GE3
Manufacturer Part Number
SI3585DV-T1-GE3
Description
MOSFET N/P-CH 20V 6-TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI3585DV-T1-E3.pdf
(8 pages)
Specifications of SI3585DV-T1-GE3
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
125 mOhm @ 2.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2A, 1.5A
Vgs(th) (max) @ Id
600mV @ 250µA
Gate Charge (qg) @ Vgs
3.2nC @ 4.5V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
6-TSOP (0.063", 1.60mm Width)
Transistor Polarity
N And P Channel
Continuous Drain Current Id
1.8A
Drain Source Voltage Vds
20V
Power Dissipation Pd
750mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI3585DV-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3585DV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si3585DV
Vishay Siliconix
www.vishay.com
4
–0.0
–0.2
–0.4
–0.6
0.1
0.4
0.2
10
1
0.00
–50
0.01
0.1
2
1
10
–4
–25
Source-Drain Diode Forward Voltage
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
T
J
V
= 150_C
0.3
SD
0
– Source-to-Drain Voltage (V)
T
Threshold Voltage
I
D
J
= 250 mA
– Temperature (_C)
25
10
0.6
–3
Single Pulse
50
0.9
Normalized Thermal Transient Impedance, Junction-to-Ambient
T
75
J
= 25_C
100
10
1.2
–2
125
_
1.5
Square Wave Pulse Duration (sec)
150
10
–1
1
0.40
0.32
0.24
0.16
0.08
0.00
8
6
4
2
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
I
D
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
1
V
= 1 A
P
GS
DM
JM
0.1
– Gate-to-Source Voltage (V)
– T
A
t
1
= P
Time (sec)
t
2
2
DM
Z
thJA
I
thJA
D
100
t
t
(t)
= 2.4 A
1
2
= 87_C/W
S-03512—Rev. B, 04-Apr-01
1
3
Document Number: 71184
600
4
10
5
30