CM1293A-02SR ON Semiconductor, CM1293A-02SR Datasheet - Page 4

• Manufacturer Part Number: CM1293A-02SR
• Description: ESD PROT LOW CAP 2CH 143SOT-4
• Manufacturer: ON Semiconductor

Specifications of CM1293A-02SR

• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 6V
• Power (watts): 225mW
• Polarization: 2 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Package / Case: SOT-143-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Specifications (cont’d)
SYMBOL PARAMETER
∆
R
V
I
C
V
V
V
LEAK
I
C
ESD
DYN
P
CL
IN
P
F
IO
Note 1: All parameters specified at T
Note 2: Human Body Model per MIL-STD-883, Method 3015, C
Note 3: Standard IEC 61000-4-2 with C
Note 4: These measurements performed with no external capacitor on V
Operating Supply Voltage (V
Operating Supply Current
Diode Forward Voltage
Channel Leakage Current
Channel Input Capacitance
Channel I/O to I/O capacitance
ESD Protection
Channel Clamp Voltage
Dynamic Resistance
Top Diode
Bottom Diode
Peak Discharge Voltage at any
channel input, in system
Positive Transients
Negative Transients
Positive Transients
Negative Transients
Contact discharge per
IEC 61000-4-2 standard
ELECTRICAL OPERATING CHARACTERISTICS
P
A
-V
= –40°C to +85°C unless otherwise noted.
Rev. 4 | Page 4 of 16 | www.onsemi.com
Discharge
N
)
CONDITIONS
(V
I
T
At 1 MHz, V
Notes 3 and 4; T
I
I
= 150pF, R
F
PP
PP
A
= 8mA; T
=25° C; V
=1A, t
=1A, t
P
-V
N
)=3.3V
p
p
=8/20µs; T
=8/20µs; T
Discharge
A
P
=25° C
=5V, V
P
=3.3V, V
= 330 Ω , V
Discharge
A
=25° C
N
A
A
=0V
=25° C; Notes 4
=25° C; Notes 4
= 100pF, R
N
=0V, V
P
P
.
= 3.3V, V
IN
=1.65V
Discharge
N
grounded.
= 1.5K Ω, V
0.60
0.60
MIN
±8
P
1
= 3.3V, V
TYP
0.80
0.80
+9.9
–1.6
0.96
±0.1
3.3
1.5
0.5
N
grounded.
CM1293A
MAX
0.95
0.95
±1.0
5.5
8.0
2.0
UNITS
µA
µA
pF
pF
kV
Ω
Ω
V
V
V
V
V