MMBZ6V2AL,215 NXP Semiconductors, MMBZ6V2AL,215 Datasheet - Page 10

• Manufacturer Part Number: MMBZ6V2AL,215
• Description: DIODE ESD PROT DBL 3V SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ6V2AL,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Power (watts): 24W
• Polarization: 2 Channel Array - Unidirectional
• Voltage - Breakdown: 5.89V
• Voltage - Reverse Standoff (typ): 3V
• Clamping Voltage: 8.7 V
• Current Rating: 2.76 A
• Channels: 1 Channel
• Breakdown Voltage: 6.2 V
• Capacitance: 175 pF
• Termination Style: Solder Tail
• Power Dissipation Pd: 290 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
MMBZXAL_SER_2
Product data sheet
Fig 3.
Fig 5.
P
(pF)
(W)
C
PPM
(1) MMBZ5V6AL: unidirectional
(2) MMBZ5V6AL: bidirectional
(3) MMBZ6V8AL: unidirectional
(4) MMBZ6V8AL: bidirectional
250
200
150
100
d
10
10
50
10
1
3
2
10
T
unidirectional and bidirectional
exponential pulse duration (rectangular
waveform); typical values
0
f = 1 MHz; T
voltage; typical values
Rated peak pulse power as a function of
Diode capacitance as a function of reverse
−2
amb
= 25 °C
10
−1
amb
2
= 25 °C
1
(4)
(1)
10
4
(2)
(3)
10
V
R
006aab839
2
006aab320
t
(V)
p
(ms)
Rev. 02 — 10 December 2009
10
Low capacitance unidirectional double ESD protection diodes
6
3
Fig 4.
Fig 6.
P
PPM(25°C)
P
(pF)
PPM
C
(1) MMBZ10VAL: unidirectional
(2) MMBZ10VAL: bidirectional
(3) MMBZ15VAL: unidirectional
(4) MMBZ15VAL: bidirectional
(5) MMBZ27VAL: unidirectional
(6) MMBZ27VAL: bidirectional
150
100
d
1.2
0.8
0.4
50
0
0
0
0
Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
(3)
(2)
(1)
50
amb
MMBZxAL series
5
= 25 °C
100
(2)
(3)
10
150
© NXP B.V. 2009. All rights reserved.
V
R
006aab840
T
006aab321
(V)
j
(°C)
(4)
(5)
(6)
200
15
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