LC03-6R2G ON Semiconductor, LC03-6R2G Datasheet - Page 4

• Manufacturer Part Number: LC03-6R2G
• Description: TVS 2KW 6V LO-CAP 8SOIC
• Manufacturer: ON Semiconductor
• Type: Diode Arraysr

Specifications of LC03-6R2G

• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 6.8V
• Power (watts): 2000W
• Polarization: 2 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Applications: General Purpose
• Number Of Circuits: 2
• Voltage - Working: 6V
• Voltage - Clamping: 15V
• Technology: Diode Array
• Capacitance Value: 25 pF
• Maximum Clamping Voltage: 20 V
• Number Of Elements Per Chip: 2
• Esd Protection Voltage: 15@Air Gap|8@Contact Disc KV
• Maximum Leakage Current: 20 uA
• Polarity: Unidirectional
• Clamping Voltage: 20 V
• Operating Voltage: 5 V
• Breakdown Voltage: 6.8 V
• Termination Style: SMD/SMT
• Peak Surge Current: 100 A
• Peak Pulse Power Dissipation: 2000 W
• Capacitance: 16 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 4(Max) mm W x 5(Max) mm L
• Diode Type: Bidirectional TVS
• Clamping Voltage Vc Max: 15V
• Diode Case Style: SOIC
• No. Of Pins: 8
• Termination Type: SMD
• Breakdown Voltage Min: 6.8V
• Capacitance, Cd: 16pF
• Peak Pulse Power Ppk: 2kW
• Rohs Compliant: Yes
• Pin Count: 8
• Rad Hardened: No
• Filter Terminals: SMD
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ESD Protection in USB 1.1 Port Applications
lines D+ and D- are used for bi-directional data
transmission, and the remaining two lines are reserved for
bus voltage and ground. Since USB is a hot plugging and
unplugging system, all its four lines have the risk to receive
ESD conditions in the real field of the application.
by the combination of different discrete semiconductor
products which make this technique obsolete and
non-ef ficient because the interconnections of the discrete
devices increase the parasitic inductance effects during a
As we know, a USB port is composed of four lines. The
Typical ESD protection techniques are commonly formed
TRANSCEIVER
T1/E1
RRING
TRING
RTIP
TTIP
Figure 7. Typical T1 Line Card Protection
R1
R2
R4
R5
R3
http://onsemi.com
LC03-6R2
4
T1
T2
transient condition which reduces significantly the
performance of the ESD protection circuit. The LC03-6
device provides a unique TVS Diode array designed to
protect two I/O data lines (single USB port) against damage
due to ESD conditions or transient voltage conditions.
Because of its low capacitance, it can be used in high speed
I/O data lines such as USB 1.1 components. In addition to its
low capacitance characteristics, the LC03-6 device from
ON Semiconductor complies with the most common
industrial standards for ESD, EFT and surge protection:
IEC61000-4-2, IEC61000-4-4, IEC61000-4-5.
LC03-6
LC03-6
PTC
PTC
PTC
PTC