LC03-6R2G ON Semiconductor, LC03-6R2G Datasheet - Page 2

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LC03-6R2G

Manufacturer Part Number
LC03-6R2G
Description
TVS 2KW 6V LO-CAP 8SOIC
Manufacturer
ON Semiconductor
Type
Diode Arraysr
Datasheet

Specifications of LC03-6R2G

Voltage - Reverse Standoff (typ)
5V
Voltage - Breakdown
6.8V
Power (watts)
2000W
Polarization
2 Channel Array - Bidirectional
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Applications
General Purpose
Number Of Circuits
2
Voltage - Working
6V
Voltage - Clamping
15V
Technology
Diode Array
Capacitance Value
25 pF
Maximum Clamping Voltage
20 V
Number Of Elements Per Chip
2
Esd Protection Voltage
15@Air Gap|8@Contact Disc KV
Maximum Leakage Current
20 uA
Polarity
Unidirectional
Clamping Voltage
20 V
Operating Voltage
5 V
Breakdown Voltage
6.8 V
Termination Style
SMD/SMT
Peak Surge Current
100 A
Peak Pulse Power Dissipation
2000 W
Capacitance
16 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Dimensions
4(Max) mm W x 5(Max) mm L
Diode Type
Bidirectional TVS
Clamping Voltage Vc Max
15V
Diode Case Style
SOIC
No. Of Pins
8
Termination Type
SMD
Breakdown Voltage Min
6.8V
Capacitance, Cd
16pF
Peak Pulse Power Ppk
2kW
Rohs Compliant
Yes
Pin Count
8
Rad Hardened
No
Filter Terminals
SMD
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LC03-6R2G
Quantity:
10 000
Part Number:
LC03-6R2G
Manufacturer:
SEMTECH/美国升特
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage @ I
Reverse Leakage Current @ V
Maximum Clamping Voltage @ I
Maximum Clamping Voltage @ I
Between I/O Pins and Ground @ V
Between I/O Pins @ V
10
100
8
6
4
2
0
90
80
70
60
50
40
30
20
10
-80
0
0
Figure 1. Reverse Voltage versus Temperature
-60
t
r
-40
t
Figure 3. 8 x 20 ms Pulse Waveform
P
-20
PEAK VALUE I
20
T, TEMPERATURE (°C)
R
= 0 Volts, 1.0 MHz
0
HALF VALUE I
Characteristic
PULSE WIDTH (t
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
20
RWN
t, TIME (ms)
PP
PP
t
= 1.0 mA
40
RSM
R
= 50 A, 8 x 20 mS
= 100 A, 8 x 20 mS
40
= 5.0 V
= 0 V, 1.0 MHz
@ 8 ms
60
RSM
80
/2 @ 20 ms
P
TYPICAL CHARACTERISTICS
) IS DEFINED
60
100
120
http://onsemi.com
LC03-6R2
140
80
2
Capacitance
Capacitance
20
18
16
14
12
10
16
14
12
10
8
6
4
2
0
8
6
4
2
0
Symbol
-80 -60
0
Figure 4. Clamping Voltage versus Peak Pulse
V
V
V
I
BR
R
C
C
10
Figure 2. Reverse Leakage versus
-40 -20
20
I
PP
30
Min
N/A
N/A
N/A
6.8
, PEAK PULSE CURRENT (A)
-
-
T, TEMPERATURE (°C)
40
Temperature
0
Current
50
20
Typ
8.0
16
-
-
-
-
60
40
8 x 20 ms Waveform
70
60
80
80
Max
20
15
20
25
12
-
100
90 100
120
Unit
mA
pF
pF
V
V
V
140
110

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