CLP200M STMicroelectronics, CLP200M Datasheet - Page 16

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CLP200M

Manufacturer Part Number
CLP200M
Description
IC OVP/OCP TELECOM POWERSO-10
Manufacturer
STMicroelectronics
Datasheet

Specifications of CLP200M

Voltage - Working
200V
Technology
Mixed Technology
Number Of Circuits
2
Applications
Telecommunications
Package / Case
PowerSO-10 Exposed Bottom Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power (watts)
-
Voltage - Clamping
-

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CLP200M
Fig. 37 : Junction capacitance (TIPL/GND) versus
applied voltage
Fig. 39 : Maximum non repetitive surge RMS on
state current versus overload duration (with 50Hz
sinusoidal wave and initial junction temperature
equal to 25°C)
16/21
220
200
180
160
140
120
100
100
0.1
80
60
40
10
1
0
I
C (pF)
TSM
0.1
(A)
10
1
20
V
t (s)
R
(V)
30
10
40
100
50
1000
60
Fig. 38 : Typical and maximal capacitance
between TIPL, RINGL and GND.
V TIPL = - 48 V
V RINGL # 0 V
V GND = 0 V
Fig. 40 : Maximum peak pulse current versus
surge duration
300
200
100
50
30
20
Max.
Typ.
0.01 0.02
Ipp (A)
Capacitance
RINGL and
between
GND
0.05
195
200
0.1
Capacitance
0.2
TIPL and
between
t (ms)
GND
62
0.5
1
Capacitance
TIPL and
between
2
RINGL
57
5
10

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