TPI12011NRL STMicroelectronics, TPI12011NRL Datasheet - Page 2

• Manufacturer Part Number: TPI12011NRL
• Description: IC PROTECTION TRI ISDN 8-SOIC
• Manufacturer: STMicroelectronics
• Series: TPIr

Specifications of TPI12011NRL

• Voltage - Working: 105V
• Voltage - Clamping: 120V
• Technology: Mixed Technology
• Number Of Circuits: 1
• Applications: ISDN
• Package / Case: 8-SOIC (3.9mm Width)
• Polarity: Bidirectional
• Operating Voltage: 105 V
• Breakdown Voltage: 120 V
• Peak Surge Current: 1 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 4(Max) mm W x 5(Max) mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Lead Free Status / Rohs Status: Details

Characteristics
1
2/9
Characteristics
Table 1.
1. See
Table 2.
Table 3.
1. See the reference test circuit 1
2. Surge test according to CCITT 1.5 kV, 10/700 µs between Tip or Ring and ground
3. See functional holding current test circuit 2
Figure 2.
Symbol
Symbol
Symbol
R
I
T
V
V
TSM
V
I
I
T
th(j-a)
I
I
V
PP
T
Order code
RM
BO
PP
I
TPI12011N
stg
C
RM
BR
BO
H
TPI8011N
L
j
F
Figure 3.
Peak pulse current (see note
Non repetitive surge peak on-state current (F = 50 Hz)
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10 s.
Junction to ambient
Stand-off voltage
Breakdown voltage
Breakover voltage
Leakage current
Peak pulse current
Breakover current
Holding current
Forward voltage drop
Capacitance
Absolute ratings (T
Thermal resistances
Electrical characteristics (T
Parameter
max.
µA
10
10
I
RM
@ V
(Figure
RM
105
70
V
amb
5.)
Parameter
Parameter
(1)
= 25 °C)
(Figure
)
min.
120
80
V
V
amb
BR
6.)
@ I
= 25 °C)
mA
R
1
1
note
max.
V
110
160
V
BO
10/1000 µs
t
(1)
p
5/310 µs
2/10 µs
= 10 ms
t = 1s
note
dyn.
V
120
170
typ.
V
BO
(2)
- 55 to 150
Value
note
Value
170
max.
150
260
800
800
3.5
I
mA
30
40
90
BO
8
(1)
note
°C/W
min.
150
150
Unit
mA
Unit
I
°C
°C
H
A
A
TPI
(3)