DA112S1 STMicroelectronics, DA112S1 Datasheet - Page 2

• Manufacturer Part Number: DA112S1
• Description: DIODE ARRAY ASD 8-SOIC
• Manufacturer: STMicroelectronics

Specifications of DA112S1

• Voltage - Reverse Standoff (typ): 15V
• Power (watts): 730mW
• Polarization: 6 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Applications: General Purpose
• Number Of Circuits: 6
• Voltage - Working: 18V
• Technology: Diode Array
• Product: Standard Recovery Rectifier
• Configuration: Array 12
• Reverse Voltage: 18 V
• Forward Voltage Drop: 12 V
• Reverse Current Ir: 2 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Clamping: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Characteristics
1
Table 1.
1. The surge is repeated after the device returns to ambient temperature
Table 2.
Table 3.
2/8
Symbol
V
Symbol
R
T
RRM
Symbol
I
T
PP
T
P
th (j-a)
stg
L
V
j
V
I
FP
R
F
Repetitive peak reverse voltage (for one single diode)
Repetitive peak forward current
Power dissipation
Storage temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10 s.
Electrical characteristics(T
Characteristics
Absolute maximum ratings (T
Thermal resistance
Junction to ambient
1.
Peak forward voltage
Forward voltage
Reverse leakage current
Parameter
(1)
amb
Parameter
Parameter
amb
= 25
I
t
I
V
PP
p
F
= 25
R
°C
= 8/20 µs
= 50 mA
= 15 V
= 12 A,
)
°C
)
DA108S1
DA112S1
t
p
= 8/20 µs
DA108S1 / DA112S1
-55 to +150
-55 to +150
Value
0.73
Value
260
Max.
18
12
170
1.2
12
9
2
°C/W
Unit
Unit
Unit
°C
°C
°C
W
µA
V
A
V
V