AS1353-28-T austriamicrosystems, AS1353-28-T Datasheet - Page 9

• Manufacturer Part Number: AS1353-28-T
• Description: IC REG LDO 150MA 2.8V TSOT23-5
• Manufacturer: austriamicrosystems

Specifications of AS1353-28-T

• Package / Case: SOT-23-5, SC-74A, SOT-25
• Mounting Type: Surface Mount
• Current - Output: 150mA (Min)
• Voltage - Output: 2.8V
• Voltage - Input: Up to 5.5V
• Operating Temperature: -40°C ~ 85°C
• Regulator Topology: Positive Fixed
• Voltage - Dropout (typical): 0.06V @ 150mA
• Number Of Regulators: 1
• Current - Limit (min): 160mA
• Primary Input Voltage: 3.8V
• Output Voltage Fixed: 2.8V
• Dropout Voltage Vdo: 60mV
• No. Of Pins: 5
• Output Current: 150mA
• Operating Temperature Range: -40°C To +85°C
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

AS1353/AS1356
Data Sheet
The power-OK feature is not active during shutdown and provides a power-on-reset (POR) function that can operate
down to V
To obtain a logic-level output, connect a pull-up resistor from pin POK to pin OUT. Larger values for this resistor will
help minimize current consumption; a 100kΩ resistor is perfect for most applications (see Figure 13).
Reverse-Battery Protection
The AS1353/AS1356 contain integrated reverse-battery protection circuitry which monitors the polarity of pins IN and
SHDNM and disconnects the internal circuitry and parasitic diodes if the battery is connected incorrectly. Reverse sup-
ply current is limited to 1mA if V
reverse biased with respect to ground.
Current Limiting
The AS1353/AS1356 include current limiting circuitry to protect against short-circuit conditions. The circuitry monitors
and controls the gate voltage of the P-channel MOSFET, limiting the output current to 380mA (typ). The P-channel
MOSFET output can be shorted to ground for an indefinite period of time without damaging the device.
Noise Reduction
The AS1353 uses an external 0.01µF bypass capacitor (C
circuit is used to reduce start-up time.
The use of C
Thermal-Overload Protection
The devices are protected against thermal runaway conditions by the integrated thermal sensor circuitry. Thermal
shutdown is an effective means to prevent die overheating since the power transistor is the principle heat source in the
device.
If the junction temperature exceeds 165ºC (typ, AS1356) or 150ºC (typ, AS1353), the thermal sensor starts the shut-
down logic, at which point the P-channel MOSFET is switched off. After the device temperature has dropped by
approximately 20ºC, the thermal sensor will turn the P-channel MOSFET on again. Note that this will be exhibited as a
pulsed output under continuous thermal-overload conditions.
Note: The absolute maximum junction-temperature rating of +150ºC should not be exceeding during continual oper-
Operating Region and Power Dissipation
Maximum power dissipation is determined by the thermal resistance of the case and circuit board, the temperature dif-
ference between the die junction and ambient air, and the rate of air flow. The power dissipation of the device is calcu-
lated by:
Maximum power dissipation is calculated by:
Where:
T
Θ
Θ
air.
Note: Pin GND is a multi-function pin providing a connection to the system ground and acting as a heat sink. This pin
www.austriamicrosystems.com
J
JB
JA
- T
or
is the thermal resistance through the printed circuit board, copper traces, and other materials to the surrounding
AMB
Θ
ation.
should be connected to the system ground using a large pad or ground plane.
JC
IN
is the temperature difference between the device die junction and the surrounding air.
is the thermal resistance of the package.
= 1V. A capacitor to GND may be added to generate a POR delay.
BP
- D e t a i l e d D e s c r i p t i o n
> 0.01µF improves noise performances but increases start-up time.
IN
= V
SHDNM
P
MAX
falls below ground. Load current is also limited when V
P = I
= (T
J
OUT
- T
Revision 1.03
AMB
(V
IN
) / (
BP
- V
) at pin BP to reduce output noise. An internal pre-charge
Θ
OUT
JB
+
)
Θ
JA
)
IN
or V
SHDNM
(EQ 1)
(EQ 2)
9 - 13
are