SE5230DR2G ON Semiconductor, SE5230DR2G Datasheet - Page 16

• Manufacturer Part Number: SE5230DR2G
• Description: IC OP AMP LOW VOLTAGE 8-SOIC
• Manufacturer: ON Semiconductor
• Type: General Purpose Amplifierr

Specifications of SE5230DR2G

• Amplifier Type: General Purpose
• Number Of Circuits: 1
• Output Type: Rail-to-Rail
• Slew Rate: 0.25 V/µs
• Gain Bandwidth Product: 600kHz
• Current - Input Bias: 40nA
• Voltage - Input Offset: 400µV
• Current - Supply: 1.1mA
• Current - Output / Channel: 32mA
• Voltage - Supply, Single/dual (±): 1.8 V ~ 15 V, ±0.9 V ~ 7.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Channels: 1
• Voltage Gain Db: 126.02 dB
• Common Mode Rejection Ratio (min): 85 dB
• Input Offset Voltage: 3 mV
• Operating Supply Voltage: 3 V, 5 V, 9 V, 12 V
• Supply Current: 1.6 mA
• Maximum Power Dissipation: 500 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Maximum Dual Supply Voltage: +/- 7.5 V
• Minimum Operating Temperature: - 40 C
• Rail/rail I/o Type: No
• Number Of Elements: 1
• Unity Gain Bandwidth Product: 0.6MHz
• Common Mode Rejection Ratio: 85dB
• Input Bias Current: 150nA
• Single Supply Voltage (typ): 3/5/9/12V
• Dual Supply Voltage (typ): ±3/±5V
• Power Dissipation: 500mW
• Voltage Gain In Db: 126.02dB
• Power Supply Rejection Ratio: 85dB
• Power Supply Requirement: Single/Dual
• Shut Down Feature: No
• Single Supply Voltage (min): 1.8V
• Single Supply Voltage (max): 15V
• Dual Supply Voltage (min): ±0.9V
• Dual Supply Voltage (max): ±7.5V
• Technology: Bipolar
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: Details

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
NE5230DG
NE5230DR2G
NE5230NG
SA5230DG
SA5230DR2G
SA5230NG
SE5230DG
SE5230DR2G
8
1
Device
N5230
ALYW
G
8
1
CASE 751
D SUFFIX
SOIC−8
S5230
ALYW
G
8−Pin Plastic Dual In−Line Package (PDIP−8)
8−Pin Plastic Dual In−Line Package (PDIP−8)
8−Pin Plastic Small Outline (SO−8) Package
8−Pin Plastic Small Outline (SO−8) Package
8−Pin Plastic Small Outline (SO−8) Package
8−Pin Plastic Small Outline (SO−8) Package
8−Pin Plastic Small Outline (SO−8) Package
8−Pin Plastic Small Outline (SO−8) Package
8
1
ALYWE
S5230
G
Description
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
A
WL, L
YY, Y
WW, W = Work Week
G or G
MARKING DIAGRAMS
http://onsemi.com
= Assembly Location
= Wafer Lot
= Year
= Pb−Free Package
16
Temperature Range
−40°C to +125°C
−40°C to +125°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
NE5230N
YYWWG
AWL
CASE 626
N SUFFIX
PDIP−8
SA5230N
YYWWG
2500 / Tape & Reel
2500 / Tape & Reel
2500 / Tape & Reel
AWL
98 Units / Rail
50 Units / Rail
98 Units / Rail
50 Units / Rail
98 Units / Rail
Shipping
†