NE5517D ON Semiconductor, NE5517D Datasheet - Page 4

• Manufacturer Part Number: NE5517D
• Description: IC AMP XCONDUCTANCE DUAL 16-SOIC
• Manufacturer: ON Semiconductor

Specifications of NE5517D

• Amplifier Type: Transconductance
• Number Of Circuits: 2
• Output Type: Push-Pull
• Slew Rate: 50 V/µs
• Gain Bandwidth Product: 2MHz
• Current - Input Bias: 400nA
• Voltage - Input Offset: 400µV
• Current - Supply: 2.6mA
• Current - Output / Channel: 650µA
• Voltage - Supply, Single/dual (±): 4 V ~ 44 V, ±2 V ~ 22 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (3.9mm Width)
• Number Of Channels: 2
• Input Offset Voltage: 5 mV
• Supply Voltage (max): 44 V
• Supply Current: 4 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Common Mode Rejection Ratio (min): 80 dB
• Input Voltage Range (max): Positive Rail - 3 V
• Maximum Power Dissipation: 1125 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: Details

ELECTRICAL CHARACTERISTICS
4. These specifications apply for V
5. These specifications apply for V
6. V
Input Offset Voltage
DV
V
Input Offset Change
Input Offset Current
DI
Input Bias Current
DI
Forward Transconductance
g
Peak Output Current
Peak Output Voltage
Supply Current
V
Common-mode Rejection
Ration
Common-mode Range
Crosstalk
Differential Input Current
Leakage Current
Input Resistance
Open-loop Bandwidth
Slew Rate
Buffer Input Current
Peak Buffer Output Voltage
DV
M
OS
OS
specified. The inputs to the buffers are grounded and outputs are open.
is connected to the transconductance amplifier output.
OS
B
OS
BE
/DT
Tracking
S
Including Diodes
Sensitivity
/DT
= ±15, R
/DT
of Buffer
Characteristic
OUT
Negative
Negative
Positive
Positive
= 5.0 kW connected from Buffer output to −V
Avg. TC of Input Offset Voltage
Avg. TC of Input Offset Current
R
R
I
I
ABC
ABC
L
L
S
Referred to Input (Note 5)
Unity Gain Compensated
R
Avg. TC of Input Current
= ∞, 5.0 mA ≤ I
= ∞, 5.0 mA ≤ I
Overtemperature Range
Overtemperature Range
Overtemperature Range
Refer to Buffer V
I
S
5.0 mA ≤ I
= ±15 V, I
ABC
R
L
R
= 0 (Refer to Test Circuit)
= ±15 V, T
Diode Bias Current
= 500 mA, both channels
20 Hz < f < 20 kHz
L
= 0, Overtemperature
L
Test Conditions
= 0, I
Circuit (Note 6)
= 0, I
= 0, Input = ±4.0 V
(I
(Note 4)
D V
D V
I
ABC
D
) = 500 mA
Range
ABC
ABC
OS
OS
ABC
ABC
5.0 mA
5
5
/D V+
/D V−
amb
NE5517, NE5517A, AU5517
= 500 mA
ABC
ABC
= 5.0 mA
= 500 mA, R
≤ 500 mA
BE
= 25°C, amplifier bias current (I
≤ 500 mA
≤ 500 mA
Test
http://onsemi.com
OUT
S
and 5.0 mA ≤ I
VO
= 5.0 kW connected from the buffer output to −V
IN
Symbol
CMRR
V
4
BUFFER
I
V
V
BUFFER
BIAS
R
I
I
I
B
SR
g
OUT
I
OS
OUT
CC
OS
OS
IN
M
IN
W
ABC
6700
5400
Min
350
300
+12
−12
±12
80
10
10
AU5517/NE5517
≤ 500 mA.
ABC
0.001
+14.2
−14.4
±13.5
9600
0.01
0.02
) = 500 mA, Pins 2 and 15 open unless otherwise
Typ
500
110
100
0.4
0.3
7.0
0.5
0.1
0.1
0.4
1.0
0.3
5.0
2.6
0.2
2.0
0.4
0.5
20
20
26
50
13000
Max
650
150
150
100
100
5.0
5.0
0.6
5.0
8.0
4.0
5.0
5.0
5
7700
4000
Min
350
300
+12
−12
±12
3.0
80
10
10
NE5517A
S
0.001
+14.2
−14.4
±13.5
9600
0.01
0.02
and the input of the buffer
Typ
500
110
100
0.4
0.3
7.0
0.5
0.1
0.1
0.4
1.0
0.3
5.0
2.6
0.2
2.0
0.4
0.5
20
20
26
50
12000
Max
650
150
150
2.0
5.0
2.0
2.0
3.0
0.6
5.0
7.0
7.0
4.0
5.0
5.0
5.0
10
mV/°C
mA/°C
mA/°C
mmho
mV/V
MHz
Unit
V/ms
mV
mV
mV
mA
mV
mA
mA
dB
mA
dB
dB
nA
nA
kW
mA
V
V
V