LMV931SN3T1G ON Semiconductor, LMV931SN3T1G Datasheet - Page 8

• Manufacturer Part Number: LMV931SN3T1G
• Description: IC OP AMP RRIO SGL 1.8V TSOP5
• Manufacturer: ON Semiconductor

Specifications of LMV931SN3T1G

• Amplifier Type: General Purpose
• Number Of Circuits: 1
• Output Type: Rail-to-Rail
• Slew Rate: 0.48 V/µs
• Gain Bandwidth Product: 1.5MHz
• Current - Input Bias: 1nA
• Voltage - Input Offset: 1000µV
• Current - Supply: 116µA
• Current - Output / Channel: 100mA
• Voltage - Supply, Single/dual (±): 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TSOT-23-5, TSOT-5, TSOP-5
• Number Of Channels: 1
• Voltage Gain Db: 104 dB, 110 dB
• Common Mode Rejection Ratio (min): 70 dB, 70 dB
• Input Voltage Range (max): 5.5 V
• Input Voltage Range (min): 1.8 V
• Input Offset Voltage: 1 mV
• Operating Supply Voltage: 1.8 V to 5.5 V
• Supply Current: 80 uA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: Details

5V AC ELECTRICAL CHARACTERISTICS
0 V, V
9. Connected as voltage follower with input step from V− to V+. Number specified is the slower of the positive and negative slew rates.
10. Input referred, R
Slew Rate
Gain Bandwidth
Product
Phase Margin
Gain Margin
Input−Referred
Voltage Noise
Total Harmonic
Distortion
Amplifier−to−
Amplifier Isolation
V
O
Parameter
CM
= V+).
= 2.0 V,Vo = V+/2 and R
L
= 100 kW connected to V+/2. Each amp excited in turn with 1 kHz to produce V
Symbol
GBWP
THD
Qm
Gm
SR
e
n
L
> 1 MW. Typical specifications represent the most likely parametric norm.
f = 1 kHz, A
Unless otherwise specified, all limits are guaranteed for T
f = 50 kHz, V
V
= +1, R
http://onsemi.com
Condition
(Note 10)
(Note 9)
L
= 600 W, V
CM
8
= 2 V
O
= 1 V
PP
Min
O
= 3 V
PP
0.022
0.48
Typ
123
A
1.5
65
50
. (For Supply Voltages < 3 V,
8
= 25°C, V+ = 5 V, V− =
Max
nV/√Hz
V/uS
MHz
Unit
dB
dB
%
°