LMC660CN/NOPB National Semiconductor, LMC660CN/NOPB Datasheet - Page 2

• Manufacturer Part Number: LMC660CN/NOPB
• Description: IC OP AMP QUAD CMOS 14-DIP
• Manufacturer: National Semiconductor

Specifications of LMC660CN/NOPB

• Amplifier Type: General Purpose
• Number Of Circuits: 4
• Output Type: Rail-to-Rail
• Slew Rate: 1.1 V/µs
• Gain Bandwidth Product: 1.4MHz
• Current - Input Bias: 0.002pA
• Voltage - Input Offset: 1000µV
• Current - Supply: 1.5mA
• Current - Output / Channel: 40mA
• Voltage - Supply, Single/dual (±): 4.75 V ~ 15.5 V, ±2.38 V ~ 7.75 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Through Hole
• Package / Case: 14-DIP (0.300", 7.62mm)
• Bandwidth: 1.4 MHz
• Channel Separation: 130
• Common Mode Rejection Ratio: 83
• Current, Input Bias: 0.002 pA
• Current, Input Offset: 0.001 pA
• Current, Output: 40 mA
• Current, Supply: 0.75 mA
• Harmonic Distortion: 0.01 %
• Impedance, Thermal: 101 °C/W
• Number Of Amplifiers: Dual
• Package Type: MDIP-8
• Resistance, Input: 1 Teraohms
• Temperature, Operating, Range: 0 to +70 °C
• Voltage, Gain: 2000 V/mV
• Voltage, Input: 4.75 to 15.5 V
• Voltage, Noise: 22 nV/sqrt Hz
• Voltage, Offset: 1 mV
• Voltage, Output, High: 14.63 V
• Voltage, Output, Low: 0.26 V
• Voltage, Supply: 5 V
• Number Of Channels: 4
• Voltage Gain Db: 126.02 dB
• Common Mode Rejection Ratio (min): 63 dB
• Input Offset Voltage: 6 mV at 5 V
• Operating Supply Voltage: 5 V, 9 V, 12 V, 15 V
• Supply Current: 2.7 mA at 5 V
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *LMC660CN; *LMC660CN/NOPB; LMC660; LMC660CN

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Absolute Maximum Ratings
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please contact the National Semiconductor Sales Office/
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DC Electrical Characteristics
Differential Input Voltage
Supply Voltage
Output Short Circuit to V
Output Short Circuit to V
Lead Temperature
Storage Temp. Range
Voltage at Input/Output Pins
Current at Output Pin
Current at Input Pin
Current at Power Supply Pin
Input Offset Voltage
Input Offset Voltage
Average Drift
Input Bias Current
Input Offset Current
Input Resistance
Common Mode
Rejection Ratio
Positive Power Supply
Rejection Ratio
Negative Power Supply
Rejection Ratio
Input Common-Mode
Voltage Range
Large Signal
Voltage Gain
Unless otherwise specified, all limits guaranteed for T
V
(Soldering, 10 sec.)
−
= 0V, V
Parameter
CM
= 1.5V, V
+
−
O
= 2.5V and R
0V ≤ V
V
5V ≤ V
V
0V ≤ V
V
For CMRR ≥ 50 dB
R
Sourcing
Sinking
R
Sourcing
Sinking
(V
+
O
+
L
L
+
= 15V
= 5V & 15V
= 2 kΩ (Note 5)
= 600Ω (Note 5)
= 2.5V
) + 0.3V, (V
Conditions
CM
+
−
−65˚C to +150˚C
L
±
≤ 15V
≤ −10V
Supply Voltage
>
≤ 12.0V
1MΩ unless otherwise specified.
(Note 3)
(Note 11)
−
(Note 1)
) − 0.3V
±
±
18 mA
35 mA
260˚C
5 mA
16V
J
= 25˚C. Boldface limits apply at the temperature extremes. V
2
V
(Note 4)
0.002
0.001
+
2000
1000
−0.4
Typ
500
250
1.3
>
Operating Ratings
83
83
94
− 1.9
1
Power Dissipation
Junction Temperature
ESD tolerance (Note 8)
Temperature Range
Supply Voltage Range
Power Dissipation
Thermal Resistance (θ
1
LMC660AI
LMC660C
14-Pin SOIC
14-Pin MDIP
LMC660AI
V
V
(Note 4)
Limit
+
+
−0.1
440
400
180
120
220
200
100
3.3
70
68
70
68
84
83
60
− 2.3
− 2.5
3
4
2
0
JA
) (Note 10)
LMC660C
V
V
(Note 4)
+
+
Limit
−0.1
300
200
150
100
6.3
63
62
63
62
74
73
90
80
50
40
− 2.3
− 2.4
6
2
1
0
−40˚C ≤ T
0˚C ≤ T
4.75V to 15.5V
J
J
115˚C/W
(Note 2)
(Note 9)
≤ +85˚C
≤ +70˚C
85˚C/W
TeraΩ
1000V
Units
µV/˚C
V/mV
V/mV
V/mV
V/mV
+
150˚C
max
max
max
max
min
min
min
min
min
min
min
min
mV
pA
pA
dB
dB
dB
= 5V,
V
V