AD8055AR Analog Devices Inc, AD8055AR Datasheet - Page 5

• Manufacturer Part Number: AD8055AR
• Description: IC OPAMP VF LDIST LN LP 8SOIC
• Manufacturer: Analog Devices Inc

Specifications of AD8055AR

• Slew Rate: 1400 V/µs
• Mounting Type: Surface Mount
• Rohs Status: RoHS non-compliant
• Amplifier Type: Voltage Feedback
• Number Of Circuits: 1
• -3db Bandwidth: 300MHz
• Current - Input Bias: 400nA
• Voltage - Input Offset: 3000µV
• Current - Supply: 5.4mA
• Current - Output / Channel: 60mA
• Voltage - Supply, Single/dual (±): 8 V ~ 12 V, ±4 V ~ 6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 8-SOIC (3.9mm Width)
• Op Amp Type: Voltage Feedback
• No. Of Amplifiers: 1
• Bandwidth: 300MHz
• No. Of Pins: 8
• Single Supply Voltage Min (+v): 4V
• Gain: 1dB
• Settling Time: 20ns
• Output Type: -
• Gain Bandwidth Product: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Supply Voltage
Input Voltage (Common Mode)
Differential Input Voltage
Output Short-Circuit Duration
Storage Temperature Range N, R
Operating Temperature Range (A Grade)
Lead Temperature (Soldering 10 sec)
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Ratings
13.2 V
±V
±2.5 V
Observe Power
Derating Curves
−65°C to +150°C
−40°C to +125°C
300°C
S
Rev. J | Page 5 of 16
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8055/AD8056 is limited by the associated rise in junction
temperature. The maximum safe junction temperature for
plastic encapsulated devices is determined by the glass
transition temperature of the plastic, approximately 150°C.
Exceeding this limit temporarily can cause a shift in parametric
performance due to a change in the stresses exerted on the die
by the package. Exceeding a junction temperature of 175°C for
an extended period can result in device failure.
While the AD8055/AD8056 are internally short-circuit
protected, this may not be sufficient to guarantee that the
maximum junction temperature (150°C) is not exceeded under
all conditions. To ensure proper operation, it is necessary to
observe the maximum power derating curves.
2.5
2.0
1.5
1.0
0.5
0
–55 –45 –35 –25 –15 –5
Figure 5. Plot of Maximum Power Dissipation vs.
SOIC-8
MSOP-8
Temperature for AD8055/AD8056
AMBIENT TEMPERATURE (°C)
PDIP-8
5
SOT-23-5
15 25 35 45 55 65 75 85 95 105 115 125
AD8055/AD8056