MCP619-I/P Microchip Technology, MCP619-I/P Datasheet - Page 3
![IC OPAMP 2.3V QUAD R-R 14DIP](/photos/6/59/65935/150-14-dip_sml.jpg)
MCP619-I/P
Manufacturer Part Number
MCP619-I/P
Description
IC OPAMP 2.3V QUAD R-R 14DIP
Manufacturer
Microchip Technology
Specifications of MCP619-I/P
Slew Rate
0.08 V/µs
Operating Temperature
-40°C ~ 85°C
Amplifier Type
General Purpose
Number Of Circuits
4
Output Type
Rail-to-Rail
Gain Bandwidth Product
190kHz
Current - Input Bias
15nA
Voltage - Input Offset
150µV
Current - Supply
19µA
Current - Output / Channel
17mA
Voltage - Supply, Single/dual (±)
2.3 V ~ 5.5 V
Mounting Type
Through Hole
Package / Case
14-DIP (0.300", 7.62mm)
Op Amp Type
General Purpose
No. Of Amplifiers
4
Bandwidth
190kHz
Supply Voltage Range
2.3V To 5.5V
Amplifier Case Style
DIP
No. Of Pins
14
Number Of Channels
4
Voltage Gain Db
120 dB
Common Mode Rejection Ratio (min)
80 dB
Input Offset Voltage
0.15 mV
Operating Supply Voltage
3 V, 5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
-3db Bandwidth
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCP619-I/P
Manufacturer:
MICROCHIP
Quantity:
12 000
Part Number:
MCP619-I/P
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
AC ELECTRICAL CHARACTERISTICS
MCP618 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
FIGURE 1-1:
Pin on the MCP618.
© 2005 Microchip Technology Inc.
Electrical Specifications: Unless otherwise indicated, V
R
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Electrical Specifications: Unless otherwise indicated, V
R
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
GND Current
Amplifier Output Leakage
CS Dynamic Specifications
CS Low to Amplifier Output Turn-on Time
CS High to Amplifier Output High-Z
CS Hysteresis
V
L
L
OUT
= 100 k to V
= 100 k to V
CS
I
I
CS
SS
-50 nA (typ.)
10 nA (typ.)
High-Z
Parameters
Parameters
t
DD
DD
ON
/2 and C
/2 and C
V
IL
Timing Diagram for the CS
-19 µA (typ.)
L
L
= 60 pF.
= 60 pF.
V
IH
-50 nA (typ.)
10 nA (typ.)
t
OFF
I
O(LEAK)
V
GBWP
Sym
I
I
t
Sym
V
t
HYST
V
CSH
I
OFF
CSL
ON
PM
SS
SR
E
e
IH
i
IL
High-Z
ni
ni
ni
0.8 V
DD
DD
Min
–1.0
V
—
—
—
—
—
-2
= +2.3V to +5.5V, V
= +2.3V to +5.5V, V
SS
Min
—
—
—
—
—
—
DD
-0.05
Typ
0.01
0.01
0.1
0.6
10
—
—
9
0.08
Typ
190
2.2
57
32
70
0.2 V
Max
V
100
—
—
—
—
—
2
DD
Max
DD
SS
SS
—
—
—
—
—
—
= GND, T
= GND, T
Units
µA
µA
µA
nA
µs
µs
V
V
V
nV/ Hz
fA/ Hz
Units
µV
V/µs
kHz
A
MCP616/7/8/9
A
CS = V
CS = V
CS = V
CS = V
CS = 0.2V
G = +1 V/V, R
CS = 0.8V
G = +1 V/V, R
V
°
P-P
= 25°C, V
DD
= 25°C, V
= 5.0V
SS
DD
DD
DD
G = +1
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
DD
DD
CM
CM
Conditions
to V
to V
L
L
= V
= V
= 1 k
= 1 k
Conditions
OUT
OUT
DD
DD
/2, V
/2, V
DS21613B-page 3
= 0.9(V
= 0.1(V
to V
to V
OUT
OUT
SS
SS
DD
DD
V
V
/2),
/2),
DD
DD
/2,
/2,