LF347N/NOPB National Semiconductor, LF347N/NOPB Datasheet - Page 2

• Manufacturer Part Number: LF347N/NOPB
• Description: IC OP AMP QUAD JFET WIDE 14-DIP
• Manufacturer: National Semiconductor
• Series: BI-FET II™r

Specifications of LF347N/NOPB

• Amplifier Type: J-FET
• Number Of Circuits: 4
• Slew Rate: 13 V/µs
• Gain Bandwidth Product: 4MHz
• Current - Input Bias: 50pA
• Voltage - Input Offset: 5000µV
• Current - Supply: 7.2mA
• Voltage - Supply, Single/dual (±): 8 V ~ 36 V, ±4 V ~ 18 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Through Hole
• Package / Case: 14-DIP (0.300", 7.62mm)
• Bandwidth: 4 MHz
• Channel Separation: -120
• Common Mode Rejection Ratio: 100
• Current, Input Bias: 50 pA
• Current, Input Offset: 25 pA
• Current, Output: 31 mA
• Current, Supply: 7.2 mA
• Harmonic Distortion: 0.02 %
• Impedance, Thermal: 75 °C/W
• Number Of Amplifiers: Quad
• Package Type: MDIP-14
• Power Dissipation: 1000 mW
• Resistance, Input: 10^12 Ohms
• Temperature, Operating, Range: 0 to +70 °C
• Voltage, Gain: 100 V/mV
• Voltage, Input: 8 to 36 V
• Voltage, Noise: 20 nV/sqrt Hz
• Voltage, Offset: 5 mV
• Voltage, Output, High: 13.5 V
• Voltage, Output, Low: -13.5 V
• Voltage, Supply: ±15 V
• Number Of Channels: 4
• Voltage Gain Db: 100 dB
• Common Mode Rejection Ratio (min): 70 dB
• Input Voltage Range (max): 36 V
• Input Voltage Range (min): 8 V
• Input Offset Voltage: 10 mV at +/- 15 V
• Supply Current: 11 mA at +/- 15 V
• Maximum Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: Through Hole
• Maximum Dual Supply Voltage: +/- 18 V
• Minimum Operating Temperature: 0 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Output Type: -
• Current - Output / Channel: -
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *LF347N; *LF347N/NOPB; LF347; LF347NNS

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V
∆V
I
I
R
A
V
V
CMRR
PSRR
I
Symbol
OS
B
S
OS
VOL
O
CM
IN
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
DC Electrical Characteristics
OS
Supply Voltage
Differential Input Voltage
Input Voltage Range
Output Short Circuit
Power Dissipation
T
θ
jA
j
(Note 3)
Duration (Note 4)
(Notes 5, 11)
Ceramic DIP (J) Package
Plastic DIP (N) Package
Surface Mount Narrow (M)
Surface Mount Wide (WM)
max
/∆T Average TC of Input Offset
Input Offset Voltage
Voltage
Input Offset Current
Input Bias Current
Input Resistance
Large Signal Voltage Gain
Output Voltage Swing
Input Common-Mode Voltage
Range
Common-Mode Rejection Ratio
Supply Voltage Rejection Ratio
Supply Current
Parameter
Continuous
900 mW
LF147
150˚C
±
±
±
22V
38V
19V
R
Over Temperature
R
T
Over Temperature
T
Over Temperature
T
V
V
Over Temperature
V
V
R
(Note 9)
LF347B/LF347
j
j
j
S
S
S
O
S
S
S
=25˚C, (Notes 7, 8)
=25˚C, (Notes 7, 8)
=25˚C
=
=
=
=10 kΩ, T
=10 kΩ
=
≤10 kΩ
Continuous
1000 mW
±
±
±
±
(Note 2)
100˚C/W
70˚C/W
75˚C/W
85˚C/W
15V, T
15V, R
15V
150˚C
10V, R
Conditions
±
±
±
(Note 7)
18V
30V
15V
A
L
L
A
=25˚C
=10 kΩ
=2 kΩ
=25˚C
2
Operating Temperature
Storage Temperature
Lead Temperature
Soldering Information
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
ESD Tolerance (Note 12)
±
±
Min
50
25
80
80
12
11
Range
Range
(Soldering, 10 sec.)
Dual-In-Line Package
Small Outline Package
Soldering (10 seconds)
Vapor Phase (60 seconds)
Infrared (15 seconds)
LF147
±
10
Typ Max Min
100
+15
−12
100
100
7.2
13.5
10
25
50
1
12
100
200
25
50
11
5
8
±
±
50
25
80
80
12
11
LF347B
±
10
Typ Max Min
100
+15
−12
100
100
7.2
13.5
10
25
50
3
12
100
200
11
(Note 6)
5
7
4
8
LF147
260˚C
−65˚C≤T
±
±
25
15
70
70
12
11
LF347
±
LF347B/LF347
10
Typ Max
+15
−12
100
100
100
7.2
10
25
50
13.5
5
A
12
≤150˚C
(Note 6)
260˚C
260˚C
215˚C
220˚C
100
200
10
13
11
4
8
900V
Units
µV/˚C
V/mV
V/mV
mV
mV
mA
pA
nA
pA
nA
dB
dB
Ω
V
V
V