LMH6601MG/NOPB National Semiconductor, LMH6601MG/NOPB Datasheet - Page 4

• Manufacturer Part Number: LMH6601MG/NOPB
• Description: IC AMP VFA 2.4V SHUTDOWN SC70-6
• Manufacturer: National Semiconductor

Specifications of LMH6601MG/NOPB

• Amplifier Type: Voltage Feedback
• Number Of Circuits: 1
• Output Type: Rail-to-Rail
• Slew Rate: 275 V/µs
• Gain Bandwidth Product: 155MHz
• -3db Bandwidth: 250MHz
• Current - Input Bias: 5pA
• Voltage - Input Offset: 1000µV
• Current - Supply: 9.6mA
• Current - Output / Channel: 180mA
• Voltage - Supply, Single/dual (±): 2.4 V ~ 5.5 V, ±1.2 V ~ 2.75 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Number Of Channels: 1
• Voltage Gain Db: 66 dB
• Common Mode Rejection Ratio (min): 56 dB
• Input Offset Voltage: 2.4 mV at 5 V
• Operating Supply Voltage: 3 V, 5 V
• Supply Current: 11.5 mA at 5 V
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• For Use With: LMH730227 - BOARD EVALUATION FOR SOIC PKGLMH730165 - BOARD EVALUATIONLMH730216 - BOARD EVAL HS MONO AMP SOT23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: LMH6601MG; LMH6601MGTR

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Frequency Domain Response
SSBW
SSBW_1
Peak
Peak_1
LSBW
Peak_2
0.1 dB BW
GBWP_1k
GBWP_150
A
PBW
DG
DP
Time Domain Response
TRS/TRL
OS
SR
T
T
PD
C
Distortion & Noise Performance
HD2
HD2_1
HD3
HD3_2
THD
V
V
I
Static, DC Performance
V
DV
I
I
R
C
N
B
OS
S
S_1
VOL
N1
N2
IO
L
IN
IN
3.3V Electrical Characteristics
V
Symbol
IO
OUT
= V
S
/2, R
–3 dB Bandwidth Small Signal
Peaking
Peaking
–3 dB Bandwidth Large Signal
Peaking
0.1 dB Bandwidth
Gain Bandwidth Product
Large Signal Open Loop Gain
Full Power BW
Differential Gain
Differential Phase
Rise & Fall Time
Overshoot
Slew Rate
Settling Time
Propagation Delay
Cap Load Tolerance
Harmonic Distortion (2
Harmonic Distortion (3
Total Harmonic Distortion
Input Voltage Noise
Input Current Noise
Input Offset Voltage
Input Offset Voltage Average Drift
Input Bias Current
Input Offset Current
Input Resistance
Input Capacitance
L
= 150Ω to V
Parameter
−
unless otherwise specified. Boldface limits apply at temperature extremes.
nd
rd
)
)
V
V
V
V
V
V
V
Unity Gain, R
Unity Gain, R
0.3V < V
–1 dB, A
R
4.43 MHz, 0.85V
R
4.43 MHz, 0.85V
R
0.25V Step
0.25V Step
2V Step
1V Step, ±0.1%
1V Step, ±0.02%
Input to Output, 250 mV Step, 50%
A
2 V
2 V
R
2 V
2 V
R
2 V
R
>10 MHz
1 MHz
>1 MHz
(Note
(Note
(Note
0V
OUT
OUT
OUT
OUT
OUT
OUT
OUT
L
L
L
V
L
L
L
= 150Ω to V
= 150Ω to V
= 150Ω to V
= 1 kΩ to V
= 1 kΩ to V
= 1 kΩ to V
= −1, 10% Overshoot, 82Ω in Series
PP
PP
PP
PP
PP
≤
Single Supply with V
= 0.25 V
= 0.25 V
= 0.25 V
= 0.25 V
= 2 V
= 2 V
= 2 V
, 10 MHz
, 10 MHz
, 10 MHz
, 10 MHz
, 10 MHz
V
8)
9)
9)
IN
OUT
V
≤
= +4, V
PP
PP
PP
1.8V
< 3V
L
L
PP
PP
PP
PP
Condition
S
S
S
= 1 kΩ to V
= 150Ω to V
S
−
−
/2
/2
/2
4
, A
, A
/2
≤
≤
OUT
V
V
V
V
= +1
= +1
OUT
OUT
= 2.8V
≤
≤
S
S
S
= 3.3V, A
/2
2.45V,
2.45V
/2
PP
,
V
= +2, R
(Note
Min
56
F
= 604Ω, SD tied to V
6)
(Note
0.05
0.06
0.23
−4.5
Typ
125
250
115
105
260
300
−61
−79
−53
−69
−66
2.7
2.6
1.4
±1
75
30
67
30
10
70
50
10
50
15
3
0
7
5
2
(Note
6)
(Note
2)
Max
±2.6
±5.5
50
25
+
,
6)
nV/
fA/
Units
μV/°C
MHz
MHz
MHz
MHz
MHz
V/μs
deg
dBc
dBc
dBc
mV
TΩ
dB
dB
dB
dB
pF
pA
pA
pF
ns
ns
ns
%
%