MC9S08RD32CPE Freescale Semiconductor, MC9S08RD32CPE Datasheet - Page 207

• Manufacturer Part Number: MC9S08RD32CPE
• Description: IC MCU 32K FLASH 2K RAM 28-DIP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08RD32CPE

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SCI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 23
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-DIP (0.600", 15.24mm)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -

1. If SAFE bit is set, V
A.4
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions should be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage. All ESD testing is in conformity with CDF-AEC-Q00 Stress
Test Qualification for Automotive Grade Integrated Circuits. (http://www.aecouncil.com/) A device is
considered to have failed if, after exposure to ESD pulses, the device no longer meets the device
specification requirements. Complete dc parametric and functional testing is performed per the applicable
device data sheet at room temperature followed by hot temperature, unless specified otherwise in the
device data sheet.
A.5
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Freescale Semiconductor
Low-voltage detection threshold
Power on reset (POR) voltage
Maximum low-voltage safe state re-arm
Supply voltage (run, wait and stop modes.)
Minimum RAM retention supply voltage applied to V
Low-voltage detection threshold
Low-voltage warning threshold
Power on reset (POR) voltage
ESD Target for Machine Model (MM)
ESD Target for Human Body Model (HBM)
Detect (LVD)
0 < f
MM circuit description
HBM circuit description
Bus
< 8 MHz
Electrostatic Discharge (ESD) Protection Characteristics
DC Characteristics
System.”
Table A-5. DC Characteristics (Temperature Range = –40 to 85°C Ambient)
Table A-4. DC Characteristics (Temperature Range = 0 to 70°C Ambient)
DD
must be above re-arm voltage to allow MCU to accept interrupts, refer to
Parameter
Parameter
Parameter
(V
(V
(V
(V
Table A-3. ESD Protection Characteristics
MC9S08RC/RD/RE/RG Data Sheet, Rev. 1.11
DD
DD
DD
DD
(1)
falling)
rising)
falling)
rising)
DD
Symbol
Symbol
V
Symbol
V
V
V
V
V
V
V
REARM
V
THHBM
V
THMM
RAM
POR
LVW
POR
LVD
LVD
DD
V
POR
1.82
1.90
1.82
1.92
2.07
2.16
0.85
Min
Min
0.8
1.8
(1), (2)
Typical
Typical
Value
1.875
2000
2.24
1.88
1.96
2.13
2.21
200
0.9
1.0
Section 5.6, “Low-Voltage
Electrical Characteristics
Max
1.90
2.60
Max
1.93
2.01
2.18
2.26
1.1
3.6
1.2
—
Unit
Unit
Unit
V
V
V
V
V
V
V
V
V
V
207