MC9S08GT16CFDE Freescale Semiconductor, MC9S08GT16CFDE Datasheet - Page 279
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MC9S08GT16CFDE
Manufacturer Part Number
MC9S08GT16CFDE
Description
IC MCU 16K FLASH 20MHZ 48-QFN
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet
1.M68EVB908GB60E.pdf
(290 pages)
Specifications of MC9S08GT16CFDE
Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
39
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-QFN
For Use With
M68DEMO908GB60E - BOARD DEMO MC9S08GB60M68EVB908GB60E - BOARD EVAL FOR MC9S08GB60
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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A.10
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see
Freescale Semiconductor
1
2
3
4
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional
information on how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin
EB619/D, Typical Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature
and de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor
defines typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for
Nonvolatile Memory.
0 < f
0 < f
T
T = 25°C
L
FLASH Specifications
to T
Bus
Bus
H
< 8 MHz
< 20 MHz
= –40°C to + 85°C
Characteristic
4
2
(2)
1
3
(2)
Table A-13. FLASH Characteristics
MC9S08GB/GT Data Sheet, Rev. 2.3
(2)
V
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
Burst
Mass
D_ret
Page
Fcyc
prog
Read
10,000
2.08
Min
150
2.1
1.8
15
5
Chapter 4,
100,000
Typical
20,000
4000
100
9
4
“Memory.”
Max
6.67
200
3.6
3.6
3.6
—
—
—
FLASH Specifications
cycles
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
µs
V
V
DD
supply.
279
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