COP8CDR9IMT8 National Semiconductor, COP8CDR9IMT8 Datasheet - Page 13

• Manufacturer Part Number: COP8CDR9IMT8
• Description: IC MCU CMOS 8BIT 48-TSSOP
• Manufacturer: National Semiconductor
• Series: COP8™ 8Cr

Specifications of COP8CDR9IMT8

• Core Processor: COP8
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: Microwire/Plus (SPI), UART/USART
• Peripherals: POR, PWM, WDT
• Number Of I /o: 39
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: *COP8CDR9IMT8

Output Current Levels
D Outputs
All Others
TRI-STATE Leakage
Allowable Sink Current per Pin
Maximum Input Current without Latchup (Note 5)
RAM Retention Voltage, V
Input Capacitance
Load Capacitance on D2
Voltage on G6 to Force Execution from Boot
ROM(Note 8)
G6 Rise Time to Force Execution from Boot ROM
Input Current on G6 when Input
Flash Memory Data Retention
Flash Memory Number of Erase/Write Cycles
8.0 Electrical Characteristics
DC Electrical Characteristics (−40˚C ≤ T
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
AC Electrical Characteristics (−40˚C ≤ T
Instruction Cycle Time (t
Flash Memory Page Erase Time
Flash Memory Mass Erase Time
Frequency of MICROWIRE/PLUS in
Slave Mode
MICROWIRE/PLUS Setup Time (t
MICROWIRE/PLUS Hold Time (t
MICROWIRE/PLUS Output Propagation
Delay (t
Input Pulse Width
Source
Sink (Note 7)
Source (Weak Pull-Up Mode)
Source (Push-Pull Mode)
Sink (Push-Pull Mode) (Note 7)
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Crystal/Resonator
Interrupt Input High Time
Interrupt Input Low Time
Timer 1 Input High Time
UPD
)
Parameter
Parameter
C
R
)
(in HALT Mode)
>
UWH
V
UWS
CC
)
)
4.5V ≤ V
2.7V ≤ V
See Table 13, Typical
Flash Memory
Endurance
(Continued)
V
V
V
V
V
V
V
V
V
V
V
G6 rise time must be slower than
100 ns
V
25˚C
See Table 13, Typical Flash
Memory Endurance
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
IN
Conditions
= 11V, V
= 4.5V, V
= 2.7V, V
= 4.5V, V
= 2.7V, V
= 4.5V, V
= 2.7V, V
= 4.5V, V
= 2.7V, V
= 4.5V, V
= 2.7V, V
= 5.5V
CC
CC
≤ 5.5V
<
4.5V
Conditions
13
CC
OH
OH
OL
OL
OH
OH
OH
OH
OL
OL
A
= 5.5V
A
= 1.0V
= 0.4V
= 1.0V
= 0.4V
= 3.8V
= 1.8V
= 3.8V
= 1.8V
= 3.8V
= 1.8V
≤ +85˚C)
≤ +85˚C)
Min
0.5
1.5
20
20
1
1
1
(Continued)
2 x V
−0.5
Min
−10
100
3.5
3.5
2.0
−7
−4
−5
−7
−4
10
10
Typ
CC
1
8
Typ
500
100
10
5
Max
150
DC
DC
2
V
±
CC
1000
Max
+0.5
15
200
7
+ 7
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Units
MHz
ms
ms
µs
µs
ns
ns
ns
cycles
t
t
t
Units
C
C
C
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
yrs
µA
µA
µA
pF
pF
nS
µA
V
V