ATTINY11L-2SU Atmel, ATTINY11L-2SU Datasheet - Page 57

• Manufacturer Part Number: ATTINY11L-2SU
• Description: IC AVR MCU 1K FLASH 2MHZ 8SOIC
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY11L-2SU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 2MHz
• Peripherals: WDT
• Number Of I /o: 6
• Program Memory Size: 1KB (512 x 16)
• Program Memory Type: FLASH
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Ram Size: -
• Data Converters: -
• Connectivity: -
• Other names: Q2525841

Table 25. Low-voltage Serial Programming Instruction Set
Note:
Note:
1006F–AVR–06/07
Instruction
Programming Enable
Chip Erase
Read Program Memory
Write Program Memory
Read EEPROM
Memory
Write EEPROM
Memory
Write Lock Bits
Read Lock Bits
Read Signature Bytes
Read Calibration Byte
Write Fuse Bits
Read Fuse Bits
a = address high bits
b = address low bits
H = 0 - Low byte, 1 - High byte
o = data out
i = data in
x = don’t care
1 = Lock bit 1
2 = Lock bit 2
3 = CKSEL0 Fuse
4 = CKSEL1 Fuse
5 = CKSEL2 Fuse
6 = CKSEL3 Fuse
7 = RSTDISBL Fuse
8 = SPIEN Fuse
9 = BODEN Fuse
A = BODLEVEL Fuse
1. The signature bytes are not readable in Lock mode 3, i.e. both lock bits programmed.
1010 1100
1010 1100
0010 H000
0100 H000
1010 0000
1100 0000
1010 1100
0101 1000
0011 0000
0011 1000
1010 1100
0101 0000
Byte 1
0101 0011
100x xxxx
xxxx xxxa
xxxx xxxa
xxxx xxxx
xxxx xxxx
1111 1211
xxxx xxxx
xxxx xxxx
xxxx xxxx
101x xxxx
xxxx xxxx
Byte 2
Instruction Format
xxxx xxxx
xxxx xxxx
bbbb bbbb
bbbb bbbb
xxbb bbbb
xxbb bbbb
xxxx xxxx
xxxx xxxx
0000 00bb
0000 0000
xxxx xxxx
xxxx xxxx
Byte 3
xxxx xxxx
xxxx xxxx
oooo oooo
iiii iiii
oooo oooo
iiii iiii
xxxx xxxx
xxxx x21x
oooo oooo
oooo oooo
A987 6543
A987 6543
Byte4
Operation
Enable serial programming while
RESET is low.
Chip erase Flash and EEPROM
memory arrays.
Read H (high or low) data o from
program memory at word address
a:b.
Write H (high or low) data i to
program memory at word address
a:b.
Read data o from EEPROM memory
at address b.
Write data i to EEPROM memory at
address b.
Write lock bits. Set bits 1,2 = “0” to
program lock bits.
Read lock bits. “0” = programmed, “1”
= unprogrammed.
Read signature byte o at address b.
Set bits A, 9 - 3 = “0” to program, “1”
to unprogram.
Read fuse bits. “0” = programmed, “1”
= unprogrammed.
ATtiny11/12
(1)
57