ATMEGA8535L-8MI Atmel, ATMEGA8535L-8MI Datasheet - Page 18

IC AVR MCU 8K LV 8MHZ IND 44-QFN

ATMEGA8535L-8MI

Manufacturer Part Number
ATMEGA8535L-8MI
Description
IC AVR MCU 8K LV 8MHZ IND 44-QFN
Manufacturer
Atmel
Series
AVR® ATmegar
Datasheets

Specifications of ATMEGA8535L-8MI

Core Processor
AVR
Core Size
8-Bit
Speed
8MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
32
Program Memory Size
8KB (4K x 16)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-VQFN Exposed Pad
Data Bus Width
8 bit
Data Ram Size
512 B
Interface Type
SPI, TWI, UART
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
32
Number Of Timers
3
Operating Supply Voltage
2.7 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATMEGA8535L-8MI
Manufacturer:
SanRex
Quantity:
1 000
Data Memory Access Times
EEPROM Data Memory
EEPROM Read/Write Access
18
ATmega8535(L)
This section describes the general access timing concepts for internal memory access.
The internal data SRAM access is performed in two clk
10.
Figure 10. On-chip Data SRAM Access Cycles
The ATmega8535 contains 512 bytes of data EEPROM memory. It is organized as a
separate data space, in which single bytes can be read and written. The EEPROM has
an endurance of at least 100,000 write/erase cycles. The access between the EEPROM
and the CPU is described in the following, specifying the EEPROM Address Registers,
the EEPROM Data Register, and the EEPROM Control Register.
“Memory Programming” on page 237 contains a detailed description on EEPROM Pro-
gramming in SPI or Parallel Programming mode.
The EEPROM Access Registers are accessible in the I/O space.
The write access time for the EEPROM is given in Table 1. A self-timing function, how-
ever, lets the user software detect when the next byte can be written. If the user code
contains instructions that write the EEPROM, some precautions must be taken. In
heavily filtered power supplies, V
causes the device, for some period of time, to run at a voltage lower than specified as
minimum for the clock frequency used, see “Preventing EEPROM Corruption” on page
22 for details on how to avoid problems in these situations.
In order to prevent unintentional EEPROM writes, a specific write procedure must be fol-
lowed. Refer to the description of the EEPROM Control Register for details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next
instruction is executed. When the EEPROM is written, the CPU is halted for two clock
cycles before the next instruction is executed.
Address
clk
Data
Data
WR
CPU
RD
Compute Address
T1
Memory Access Instruction
CC
is likely to rise or fall slowly on Power-up/down. This
Address valid
T2
CPU
cycles as described in Figure
Next Instruction
T3
2502K–AVR–10/06

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