M306N4FGTFP Renesas Electronics America, M306N4FGTFP Datasheet - Page 52
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M306N4FGTFP
Manufacturer Part Number
M306N4FGTFP
Description
IC M16C MCU FLASH 100QFP
Manufacturer
Renesas Electronics America
Series
M16C™ M16C/6Nr
Datasheets
1.M30622SAFPU5.pdf
(308 pages)
2.M306N4FGGPU3.pdf
(94 pages)
3.M306N4FGGPU3.pdf
(414 pages)
Specifications of M306N4FGTFP
Core Processor
M16C/60
Core Size
16-Bit
Speed
20MHz
Connectivity
CAN, I²C, IEBus, SIO, UART/USART
Peripherals
DMA, WDT
Number Of I /o
85
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
10K x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 26x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M306N4FGTFP
Manufacturer:
TI
Quantity:
3 001
Company:
Part Number:
M306N4FGTFP
Manufacturer:
RENESAS
Quantity:
36
Company:
Part Number:
M306N4FGTFP
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
M306N4FGTFP
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Company:
Part Number:
M306N4FGTFP#UKJ
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
M306N4FGTFP#UKJ
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
M16C/6N Group (M16C/6N4)
Rev.2.40
REJ03B0003-02400
Under development
This document is under development and its contents are subject to change.
Figure 5.9 Timing Diagram (7)
Memory Expansion Mode and Microprocessor Mode
(For 1- or 2-wait setting, external area access and multiplexed bus selection)
Read timing
Write timing
Measuring conditions :
tcyc =
Aug 25, 2006
VCC = 5 V
Input timing voltage : V
Output timing voltage : V
WR,WRL,
WRH
BCLK
BCLK
CSi
BHE
f(BCLK)
ADi
/DBi
ADi
/DBi
ADi
ALE
CSi
BHE
ADi
ALE
RD
1
t
d(BCLK-ALE)
page 50 of 88
t
d(BCLK-CS)
t
d(BCLK-ALE)
(0.5 ✕ tcyc-25)ns.min
25ns.max
t
t
t
25ns.max
t
25ns.max
t
d(BCLK-AD)
d(BCLK-CS)
d(AD-ALE)
25ns.max
d(BCLK-AD)
(0.5 ✕ tcyc-25)ns.min
d(AD-ALE)
25ns.max
25ns.max
IL
OL
= 0.8 V, V
Address
= 0.4 V, V
Address
t
t
h(BCLK-ALE)
h(BCLK-ALE)
-4ns.min
-4ns.min
IH
OH
= 2.0 V
= 2.4 V
t
d(BCLK-RD)
t
(0.5 ✕ tcyc-15)ns.min
d(BCLK-DB)
t
h(ALE-AD)
t
40ns.max
25ns.max
25ns.max
d(BCLK-WR)
t
d(AD-WR)
t
0ns.min
d(AD-RD)
0ns.min
t
dZ(RD-AD)
8ns.max
tcyc
tcyc
(1.5 ✕ tcyc-40)ns.min
(1.5 ✕ tcyc-45)ns.max
Data output
t
d(DB-WR)
t
ac3(RD-DB)
Data input
t
SU(DB-RD)
40ns.min
5. Electric Characteristics (T/V-ver.)
(0.5 ✕ tcyc-10)ns.min
(0.5 ✕ tcyc-10)ns.min
t
t
h(RD-CS)
h(BCLK-WR)
t
(0.5 ✕ tcyc-10)ns.min
h(BCLK-RD)
(0.5 ✕ tcyc-10)ns.min
t
(0.5 ✕ tcyc-10)ns.min
h(WR-CS)
t
0ns.min
0ns.min
t
t
h(RD-AD)
t
h(RD-DB)
h(WR-AD)
h(WR-DB)
0ns.min
t
t
h(BCLK-AD)
h(BCLK-AD)
t
h(BCLK-CS)
t
4ns.min
t
4ns.min
4ns.min
h(BCLK-CS)
4ns.min
VCC = 5 V
h(BCLK-DB)
4ns.min
Address
Address