HD64F3694FPJV Renesas Electronics America, HD64F3694FPJV Datasheet - Page 318

MCU 3/5V 32K J-TEMP PB-FREE 64-L

HD64F3694FPJV

Manufacturer Part Number
HD64F3694FPJV
Description
MCU 3/5V 32K J-TEMP PB-FREE 64-L
Manufacturer
Renesas Electronics America
Series
H8® H8/300H Tinyr
Datasheet

Specifications of HD64F3694FPJV

Core Processor
H8/300H
Core Size
16-Bit
Speed
20MHz
Connectivity
I²C, SCI
Peripherals
PWM, WDT
Number Of I /o
29
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
64-LQFP
For Use With
R0K436079S000BE - KIT DEV FOR H8/36079 W/COMPILER
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Section 17 EEPROM
17.5
17.5.1
When V
notices described below to prevent the data to be destroyed.
1. SCL and SDA should be fixed to V
2. V
3. When V
4. V
17.5.2
The endurance is 10
10
device is page-programmed less than 10
17.5.3
This EEPROM has a noise suppression function at SCL and SDA inputs, that cuts noise of width
less than 50 ns. Be careful not to allow noise of width more than 50 ns because the noise of with
more than 50 ms is recognized as an active pulse.
Rev.5.00 Nov. 02, 2005 Page 288 of 418
REJ09B0028-0500
4
cycles/byte in case of byte programming. The data retention time is more than 10 years when a
turned on from the ground level (V
CC
CC
should be turned off after the EEPROM is placed in a standby state.
turn on speed should be longer than 10 us.
CC
Usage Notes
Data Protection at V
Write/Erase Endurance
Noise Suppression Time
is turned on or off, the data might be destroyed by malfunction. Be careful of the
CC
is turned on from the intermediate level, malfunction is caused, so V
5
cycles/page (1% cumulative failure rate) in case of page programming and
CC
On/Off
SS
CC
).
4
or V
cycles.
SS
during V
CC
on/off.
CC
should be

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