MC9S08AC16CFGE Freescale Semiconductor, MC9S08AC16CFGE Datasheet - Page 52

• Manufacturer Part Number: MC9S08AC16CFGE
• Description: IC MCU 8BIT 16K FLASH 44-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08AC16CFGE

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 34
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-LQFP
• Package: 44LQFP
• Family Name: HCS08
• Maximum Speed: 40 MHz
• Operating Supply Voltage: 3.3|5 V
• Data Bus Width: 8 Bit
• Number Of Programmable I/os: 34
• Interface Type: I2C/SCI/SPI
• On-chip Adc: 8-chx10-bit
• Number Of Timers: 8
• Processor Series: S08AC
• Core: HCS08
• Data Ram Size: 1 KB
• Maximum Clock Frequency: 40 MHz
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08AC60E, DEMOACEX, DEMOACKIT, DCF51AC256, DC9S08AC128, DC9S08AC16, DC9S08AC60, DEMO51AC256KIT
• Minimum Operating Temperature: - 40 C
• Cpu Family: HCS08
• Device Core Size: 8b
• Frequency (max): 40MHz
• Total Internal Ram Size: 1KB
• # I/os (max): 34
• Number Of Timers - General Purpose: 8
• Operating Supply Voltage (typ): 3.3/5V
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 2.7V
• Instruction Set Architecture: CISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 44
• Package Type: LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Chapter 4 Memory
burst programming. The FCDIV register must be initialized before using any FLASH commands. This
only must be done once following a reset.
4.4.4
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. This is possible because the high voltage to the FLASH
array does not need to be disabled between program operations. Ordinarily, when a program or erase
command is issued, an internal charge pump associated with the FLASH memory must be enabled to
supply high voltage to the array. Upon completion of the command, the charge pump is turned off. When
a burst program command is issued, the charge pump is enabled and then remains enabled after completion
of the burst program operation if these two conditions are met:
52
•
The next burst program command has been queued before the current program operation has
completed.
Burst Program Execution
FLASH PROGRAM AND
ERASE FLOW
Figure 4-2. FLASH Program and Erase Flowchart
MC9S08AC16 Series Data Sheet, Rev. 8
0
TO BUFFER ADDRESS AND DATA
WRITE COMMAND TO FCMD
AND CLEAR FCBEF (Note 2)
TO LAUNCH COMMAND
WRITE TO FCDIV
WRITE 1 TO FCBEF
WRITE TO FLASH
CLEAR ERROR
FACCERR ?
FPVIOL OR
FACCERR ?
FCCF ?
START
DONE
1
NO
1
(Note 1)
YES
0
Note 2: Wait at least four bus cycles
Note 1: Required only once after reset.
ERROR EXIT
before checking FCBEF or FCCF.
Freescale Semiconductor