MC908QB8MDTE Freescale Semiconductor, MC908QB8MDTE Datasheet - Page 226
MC908QB8MDTE
Manufacturer Part Number
MC908QB8MDTE
Description
IC MCU 8BIT 8K FLASH 16-TSSOP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet
1.MC908QB8CDWE.pdf
(236 pages)
Specifications of MC908QB8MDTE
Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
SCI, SPI
Peripherals
LVD, POR, PWM
Number Of I /o
13
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
16-TSSOP
Processor Series
HC08QB
Core
HC08
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
3-Wire, ESCI, SPI, UART
Number Of Programmable I/os
13
Number Of Timers
4
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Development Tools By Supplier
FSICEBASE, M68CBL05AE, DEMO908QB8, DEMO908QC16
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 10 Channel
Controller Family/series
HC08
No. Of I/o's
14
Ram Memory Size
256Byte
Cpu Speed
8MHz
No. Of Timers
1
Digital Ic Case Style
TSSOP
Rohs Compliant
Yes
For Use With
DEMO908QB8 - BOARD DEMO FOR MC68HC908QB8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC908QB8MDTE
Manufacturer:
MAX
Quantity:
150
Part Number:
MC908QB8MDTE
Manufacturer:
FREESCALE
Quantity:
20 000
Electrical Specifications
18.17 Memory Characteristics
226
RAM data retention voltage
FLASH program bus clock frequency
FLASH PGM/ERASE supply voltage (V
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN setup time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program HV period
FLASH endurance
FLASH data retention time
1. Typical values are for reference only and are not tested in production.
2. Values are based on characterization results, not tested in production.
3. f
4. t
5. t
6. Typical endurance was evaluated for this product family. For additional information on how Freescale Semiconductor
7. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
<1 K cycles
>1 K cycles
ing HVEN to 0.
t
defines Typical Endurance, please refer to Engineering Bulletin EB619.
to 25•C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines Typical Data
Retention, please refer to Engineering Bulletin EB618.
RCV
Read
HV
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clear-
is defined as the frequency range for which the FLASH memory can be read.
(6)
Characteristic
(7)
(2)
NVS
+ t
DD
NVH
)
MC68HC908QB8 Data Sheet, Rev. 3
+ t
PGS
+ (t
PROG
x 32) ≤ t
V
PGM/ERASE
Symbol
f
t
HV
t
Read
t
MErase
V
t
t
RCV
t
PROG
t
t
t
Erase
NVHL
HV
NVH
PGS
NVS
RDR
—
—
—
maximum.
(5)
(4)
(3)
10 k
Min
100
1.3
2.7
0.9
3.6
10
30
15
—
1
0
4
5
5
1
Typ
100 k
100
—
—
—
—
—
—
—
—
—
—
—
—
1
4
Freescale Semiconductor
(1)
Max
8 M
5.5
1.1
5.5
40
—
—
—
—
—
—
—
—
—
—
4
Cycles
Years
MHz
Unit
ms
ms
ms
Hz
μs
μs
μs
μs
μs
μs
V
V