STM32F103R8H7 STMicroelectronics, STM32F103R8H7 Datasheet - Page 57
![no-image](/images/manufacturer_photos/0/6/637/stmicroelectronics_sml.jpg)
STM32F103R8H7
Manufacturer Part Number
STM32F103R8H7
Description
MCU 32BIT 64K FLASH 64BGA
Manufacturer
STMicroelectronics
Series
STM32r
Datasheet
1.STM32F103R8H6.pdf
(99 pages)
Specifications of STM32F103R8H7
Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
72MHz
Connectivity
CAN, I²C, IrDA, LIN, SPI, UART/USART, USB
Peripherals
DMA, Motor Control PWM, PDR, POR, PVD, PWM, Temp Sensor, WDT
Number Of I /o
51
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
20K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 16x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
64-LFBGA
Processor Series
STM32F103x
Core
ARM Cortex M3
3rd Party Development Tools
EWARM, EWARM-BL, MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
ST-LINK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM32F103R8H7
Manufacturer:
STMicroelectronics
Quantity:
10 000
STM32F103x8, STM32F103xB
Table 30.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
●
●
●
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
Table 31.
V
V
Symbol
Symbol Parameter
FESD
EFTB
S
EMI
Corrupted program counter
Unexpected reset
Critical Data corruption (control registers...)
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100 pF on V
pins to induce a functional disturbance
Peak level
EMS characteristics
EMI characteristics
V
LQFP100 package
compliant with
IEC 61967-2
DD
Parameter
= 3.3 V, T
Conditions
Doc ID 13587 Rev 13
A
DD
= 25 °C,
and V
SS
130 MHz to 1GHz
frequency band
SAE EMI Level
30 to 130 MHz
0.1 to 30 MHz
Monitored
V
f
conforms to IEC 61000-4-2
V
f
conforms to IEC 61000-4-4
HCLK
HCLK
DD
DD
= 3.3 V, T
= 3.3 V, T
= 72 MHz
= 72 MHz
Conditions
A
A
Max vs. [f
8/48 MHz 8/72 MHz
Electrical characteristics
= +25 °C,
= +25 °C,
12
22
23
4
HSE
/f
12
19
29
HCLK
4
]
Level/
Class
dBµV
Unit
2B
4A
57/99
-