PIC16F876A-I/SO Microchip Technology, PIC16F876A-I/SO Datasheet - Page 175
![IC MCU FLASH 8KX14 EE 28SOIC](/photos/6/59/65909/150-28-soic_sml.jpg)
PIC16F876A-I/SO
Manufacturer Part Number
PIC16F876A-I/SO
Description
IC MCU FLASH 8KX14 EE 28SOIC
Manufacturer
Microchip Technology
Series
PIC® 16Fr
Datasheets
1.PIC16F616T-ISL.pdf
(8 pages)
2.PIC16F688T-ISL.pdf
(688 pages)
3.PIC16C770-ISO.pdf
(8 pages)
4.PIC16F873A-ISO.pdf
(234 pages)
5.PIC16F873A-ISO.pdf
(6 pages)
6.PIC16F873A-ISO.pdf
(4 pages)
7.PIC16F873A-ISO.pdf
(6 pages)
8.PIC16F873A-ISO.pdf
(4 pages)
9.PIC16F873A-ISO.pdf
(22 pages)
Specifications of PIC16F876A-I/SO
Program Memory Type
FLASH
Program Memory Size
14KB (8K x 14)
Package / Case
28-SOIC (7.5mm Width)
Core Processor
PIC
Core Size
8-Bit
Speed
20MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
22
Eeprom Size
256 x 8
Ram Size
368 x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 5x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Processor Series
PIC16F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
368 B
Interface Type
CCP, I2C, MSSP, SPI, USART
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
22
Number Of Timers
3
Operating Supply Voltage
2 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, DM163022, DV164120
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 5 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
XLT28SO-1 - SOCKET TRANSITION 28SOIC 300MIL309-1073 - ADAPTER 28-SOIC TO 28-SOIC309-1024 - ADAPTER 28-SOIC TO 28-DIP309-1023 - ADAPTER 28-SOIC TO 28-DIP
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
PIC16F876AI/SO
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC16F876A-I/SO
Manufacturer:
IDT
Quantity:
201
17.0
Absolute Maximum Ratings †
Ambient temperature under bias................................................................................................................ .-55 to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on any pin with respect to V
Voltage on V
Voltage on MCLR with respect to V
Voltage on RA4 with respect to Vss ..................................................................................................................0 to +8.5V
Total power dissipation (Note 1) ...............................................................................................................................1.0W
Maximum current out of V
Maximum current into V
Input clamp current, I
Output clamp current, I
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by PORTA, PORTB and PORTE (combined) (Note 3) ....................................................200 mA
Maximum current sourced by PORTA, PORTB and PORTE (combined) (Note 3)...............................................200 mA
Maximum current sunk by PORTC and PORTD (combined) (Note 3) .................................................................200 mA
Maximum current sourced by PORTC and PORTD (combined) (Note 3) ............................................................200 mA
2003 Microchip Technology Inc.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note 1: Power dissipation is calculated as follows: Pdis = V
2: Voltage spikes below V
3: PORTD and PORTE are not implemented on PIC16F873A/876A devices.
ELECTRICAL CHARACTERISTICS
Thus, a series resistor of 50-100 should be used when applying a “low” level to the MCLR pin rather than
pulling this pin directly to V
DD
with respect to V
IK
OK
(V
DD
I
SS
(V
< 0 or V
pin ..............................................................................................................................250 mA
O
pin ...........................................................................................................................300 mA
< 0 or V
SS
I
SS
SS
SS
> V
............................................................................................................ -0.3 to +7.5V
(Note 2) .................................................................................................0 to +14V
O
SS
at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.
(except V
DD
> V
.
)
DD
)
DD
, MCLR. and RA4) ......................................... -0.3V to (V
DD
x {I
DD
- ∑ I
OH
} + ∑ {(V
PIC16F87XA
DD
- V
OH
) x I
DS39582B-page 173
OH
} + ∑(V
DD
O
+ 0.3V)
l x I
20 mA
20 mA
OL
)