PIC16F876A-E/ML Microchip Technology, PIC16F876A-E/ML Datasheet - Page 38
![IC MCU FLASH 8KX14 A/D 28QFN](/photos/6/81/68120/150-28-qfn_sml.jpg)
PIC16F876A-E/ML
Manufacturer Part Number
PIC16F876A-E/ML
Description
IC MCU FLASH 8KX14 A/D 28QFN
Manufacturer
Microchip Technology
Series
PIC® 16Fr
Datasheets
1.PIC16F616T-ISL.pdf
(8 pages)
2.PIC16F688T-ISL.pdf
(688 pages)
3.PIC16C770-ISO.pdf
(8 pages)
4.PIC16F873A-ISO.pdf
(234 pages)
5.PIC16F873A-ISO.pdf
(6 pages)
6.PIC16F873A-ISO.pdf
(4 pages)
7.PIC16F873A-ISO.pdf
(6 pages)
8.PIC16F873A-ISO.pdf
(4 pages)
9.PIC16F873A-ISO.pdf
(22 pages)
Specifications of PIC16F876A-E/ML
Core Processor
PIC
Core Size
8-Bit
Speed
20MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
22
Program Memory Size
14KB (8K x 14)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
368 x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 5x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 125°C
Package / Case
28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PIC16F876A-E/ML
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
- PIC16F616T-ISL PDF datasheet
- PIC16F688T-ISL PDF datasheet #2
- PIC16C770-ISO PDF datasheet #3
- PIC16F873A-ISO PDF datasheet #4
- PIC16F873A-ISO PDF datasheet #5
- PIC16F873A-ISO PDF datasheet #6
- PIC16F873A-ISO PDF datasheet #7
- PIC16F873A-ISO PDF datasheet #8
- PIC16F873A-ISO PDF datasheet #9
- Current page: 38 of 234
- Download datasheet (5Mb)
PIC16F87XA
3.5
To read a program memory location, the user must write
two bytes of the address to the EEADR and EEADRH
registers, set the EEPGD control bit (EECON1<7>) and
then set control bit RD (EECON1<0>). Once the read
control bit is set, the program memory Flash controller
will use the next two instruction cycles to read the data.
This causes these two instructions immediately follow-
EXAMPLE 3-3:
DS39582B-page 36
;
;
Reading Flash Program Memory
BSF
BCF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BSF
BSF
NOP
NOP
BCF
MOVF
MOVWF
MOVF
MOVWF
FLASH PROGRAM READ
STATUS, RP1
STATUS, RP0
MS_PROG_EE_ADDR
EEADRH
LS_PROG_EE_ADDR
EEADR
STATUS, RP0
EECON1, EEPGD
EECON1, RD
STATUS, RP0
EEDATA, W
DATAL
EEDATH, W
DATAH
;
; Bank 2
;
; MS Byte of Program Address to read
;
; LS Byte of Program Address to read
; Bank 3
; Point to PROGRAM memory
; EE Read
; Any instructions here are ignored as program
; memory is read in second cycle after BSF EECON1,RD
; Bank 2
; W = LS Byte of Program EEDATA
;
; W = MS Byte of Program EEDATA
;
ing the “BSF EECON1,RD” instruction to be ignored.
The data is available in the very next cycle in the
EEDATA and EEDATH registers; therefore, it can be
read as two bytes in the following instructions. EEDATA
and EEDATH registers will hold this value until another
read or until it is written to by the user (during a write
operation).
2003 Microchip Technology Inc.
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