ATMEGA644PA-MUR Atmel, ATMEGA644PA-MUR Datasheet - Page 283
![IC MCU AVR 64K FLASH 44VQFN](/photos/12/13/121316/313-44-qfn_sml.jpg)
ATMEGA644PA-MUR
Manufacturer Part Number
ATMEGA644PA-MUR
Description
IC MCU AVR 64K FLASH 44VQFN
Manufacturer
Atmel
Series
AVR® ATmegar
Specifications of ATMEGA644PA-MUR
Core Processor
AVR
Core Size
8-Bit
Speed
20MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
32
Program Memory Size
64KB (32K x 16)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-VQFN Exposed Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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25.8
25.8.1
25.8.2
8272A–AVR–01/10
Self-Programming the Flash
Performing Page Erase by SPM
Filling the Temporary Buffer (Page Loading)
The program memory is updated in a page by page fashion. Before programming a page with
the data stored in the temporary page buffer, the page must be erased. The temporary page buf-
fer is filled one word at a time using SPM and the buffer can be filled either before the Page
Erase command or between a Page Erase and a Page Write operation:
Alternative 1, fill the buffer before a Page Erase
• Fill temporary page buffer
• Perform a Page Erase
• Perform a Page Write
Alternative 2, fill the buffer after Page Erase
• Perform a Page Erase
• Fill temporary page buffer
• Perform a Page Write
If only a part of the page needs to be changed, the rest of the page must be stored (for example
in the temporary page buffer) before the erase, and then be rewritten. When using alternative 1,
the Boot Loader provides an effective Read-Modify-Write feature which allows the user software
to first read the page, do the necessary changes, and then write back the modified data. If alter-
native 2 is used, it is not possible to read the old data while loading since the page is already
erased. The temporary page buffer can be accessed in a random sequence. It is essential that
the page address used in both the Page Erase and Page Write operation is addressing the same
page. See
code example.
To execute Page Erase, set up the address in the Z-pointer, write “X0000011” to SPMCSR and
execute SPM within four clock cycles after writing SPMCSR. The data in R1 and R0 is ignored.
The page address must be written to PCPAGE in the Z-register. Other bits in the Z-pointer will
be ignored during this operation.
• Page Erase to the RWW section: The NRWW section can be read during the Page Erase.
• Page Erase to the NRWW section: The CPU is halted during the operation.
Note:
To write an instruction word, set up the address in the Z-pointer and data in R1:R0, write
“00000001” to SPMCSR and execute SPM within four clock cycles after writing SPMCSR. The
content of PCWORD in the Z-register is used to address the data in the temporary buffer. The
temporary buffer will auto-erase after a Page Write operation or by writing the RWWSRE bit in
SPMCSR. It is also erased after a system reset. Note that it is not possible to write more than
one time to each address without erasing the temporary buffer.
If the EEPROM is written in the middle of an SPM Page Load operation, all data loaded will be
lost.
164A/164PA/324A/324PA/644A/644PA/1284/1284P
If an interrupt accurs in the time sequence, the four cycle access cannot be guaranteed. In order
to ensure atomic operation, you should disable interrupts before writing to SPMCSR.
”Simple Assembly Code Example for a Boot Loader” on page 287
for an assembly
283
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